摘要:

The redistribution of arsenic in Si has been studied in terms of the relative rates of oxidation and diffusion in silicon. Redistribution of arsenic in silicon during oxidation is dependent on the ratio of oxidation rate to the diffusivity in silicon,B/D1/2, as well as on the thermodynamic equilibrium segregation coefficient. It was found that for the value ofB/D1/2larger than 50, most of the arsenic impurity becomes trapped in SiO2. For the smaller value ofB/D1/2, snowplowing of arsenic results.

ISSN:0003-6951    

DOI:10.1063/1.98067

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The first successful substitutional doping of dilute magnetic semiconductor superlattices composed of alternating layers of CdMnTe and CdTe is reported. Thesen‐type In‐doped multilayer structures were prepared using a new thin‐film growth technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated with visible light during the deposition process. The electrical, optical, and structural properties of the CdMnTe‐CdTe superlattices are discussed.

ISSN:0003-6951    

DOI:10.1063/1.98068

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Device quality GaAs was grown at substrate temperatures as low as 430 °C, by decreasing the growth rate to 0.2 &mgr;m/h and by using dimeric arsenic. Precise doping control down to 1×1016cm−3has been easily achieved and Hall mobilities of up to 66% of the best molecular beam epitaxy values have been measured. By contrast, the use of As4under the same growth conditions led to films with poor electrical and optical properties. These results add further evidence to the superiority of As2in reducing the concentration of compensation deep levels, and provide the first conclusive evidence of its significant role in the low‐temperature growth of high quality GaAs.

ISSN:0003-6951    

DOI:10.1063/1.98069

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Ion milling of electrochemically etched tungsten tips is shown to improve the characteristics for scanning tunneling microscopy. The primary mechanism for the enhancement of tip reliability is identified to be the removal of a residual oxide. A greatly decreased radius of curvature is also achieved without significantly changing the macrostructural geometry of the tip.

ISSN:0003-6951    

DOI:10.1063/1.98070

出版商:AIP    

年代:1987

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.98072

出版商:AIP    

年代:1987

数据来源: AIP