摘要:

To obtain an insight of the factors limiting the current gain, minority‐carrier lifetime (&tgr;n), base transport factor (&agr;T), and emitter injection efficiency (&ggr;) have been studied innpnAlGaAs/GaAs heterojunction bipolar transistors using a base width modulation technique. It is found that in addition to &ggr;, &agr;Tis also a function of current injection level. At low injection &agr;Tincreases at a fast rate with increasing injection. It is felt that, in addition to the surface recombination current at the periphery of the emitter‐base space‐charge region which affects &ggr;, surface recombination of the minority carriers in the base of a mesa device is also important as it greatly reduces &agr;Tand hence the current gain.

ISSN:0003-6951    

DOI:10.1063/1.96554

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A monolithic optoelectronic circuit, consisting of a GaAs light‐emitting diode (LED) driven by a Si metal‐oxide‐semiconductor (MOS) transistor, has been fabricated. Light output as a function of applied gate voltage was measured. The LED’s were fabricated in GaAs layers on Ge‐coated Si substrates containing MOS transistors. Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible.

ISSN:0003-6951    

DOI:10.1063/1.96555

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Time‐resolved photoluminescence at low temperatures has been studied in ZnSe/(Zn,Mn)Se multiple quantum wells and (Zn,Mn)Se thin films, with emphasis on determination of the exciton formation rate and the energy transfer to the Mn‐iond‐electron states, the latter contributing to the dominant yellow luminescence in (Zn,Mn)Se. In the quantum well samples which show efficient exciton (blue) emission, the capture of electron‐hole pairs to the ZnSe layers on a picosecond timescale is sufficiently rapid to substantially reduce the yellow luminescence.

ISSN:0003-6951    

DOI:10.1063/1.96556

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A new insulating film, InPxOy, has been deposited in an indirect plasma‐enhanced low‐pressure chemical vapor deposition system for use as a gate dielectric layer on InP. In this system the oxygen is excited in an rf plasma chamber which is separated from the deposition chamber to avoid radiation damage to the InP surfaces. Triethylindium (TEI) and PH3were used as sources for indium and phosphorus, respectively. A two‐zone furnace was employed in which PH3was decomposed in the high‐temperature (800 °C) zone, whereas deposition was carried out in the low‐temperature (300 °C) zone. The electrical properties of the deposited films are dependent, to a large extent, upon the ratio of TEI vapor to PH3during deposition. The resistivities range from 1013to 1015&OHgr; cm. Fast interface state densities as determined from capacitance‐voltage (C‐V) measurements of layers deposited onn‐type InP substrates exhibit minima as low as 1010cm−2 eV−1. The hysteresis in the high‐frequencyC‐Vcurves was as low as 0.2 V, indicating that the densities of the slow states were reduced to a very low level due, probably, to the structural compatibility between the deposited layer and the InP substrates.

ISSN:0003-6951    

DOI:10.1063/1.96557

出版商:AIP    

年代:1986

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.97033

出版商:AIP    

年代:1986

数据来源: AIP