摘要:

Experimental data on the phase relations in the Cu, In, Se system are presented and the growth of single crystals of CuInSe2from the melt is described. Hall measurements on bothn‐ andp‐type crystals reveal that impurity conduction dominates the low‐temperature transport properties. Type conversion by annealing of initiallyn‐type crystals in excess selenium vapor leads to a substantial increase in the compensation level.

ISSN:0003-6951    

DOI:10.1063/1.94791

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Crystal homogeneities in liquid‐encapsulated Czochralski grown, semi‐insulating GaAs (100) wafers were evidently improved by annealing at 800 °C for more than 12 h. The improvement was confirmed by observing cathodoluminescence intensity line scanning profile and by measuring field‐effect transistor (FET) threshold voltage standard deviation &sgr;Vth. &sgr;Vthfor 14‐h and 18‐h annealed/polished wafers exhibited about one‐half that for a nonannealed wafer. Direct evidence of the improvement was also obtained by measuring dislocation effect on FET threshold voltage.

ISSN:0003-6951    

DOI:10.1063/1.94792

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Bias effects on the deposition of hydrogenated amorphous silicon (a‐Si:H) film in the glow discharge were investigated by triode system which can control the negative bias without changing the other deposition conditions. The growth rate, H content, and photoconductivity of the film deposited at the substrate temperature 300–320 °C increased with the negatively enhanced bias. The results would be due to the enhancement of  ion flow by the bias and show that the bias has an advantage for the improvement of thea‐Si:H film characteristics.

ISSN:0003-6951    

DOI:10.1063/1.94793

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The energy levels of defect states in amorphous silicon nitride have been calculated and the results are used to identify the nature of trap states responsible for charge trapping during transport and the charge storage leading to memory action. We argue that the Si dangling bond is the memory trap in chemical vapor deposited memory devices and is also the center in plasma‐deposited nitride responsible for hopping at low electric fields and for charge‐trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors.

ISSN:0003-6951    

DOI:10.1063/1.94794

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Capacitance measurements on undoped polycrystalline silicon gate capacitors are used for oxide trapping characterization. In this structure, a field‐effect modulation on both interfaces is observed in a singleC‐Vplot. A variation in the insulator charge state is detected by its effect on both interfaces. The main advantage of this method is that both trapped charge magnitude and centroid are obtained by a single measurement with a minimal disturbance of the charge distribution. The method is demonstrated on thin oxide capacitors subjected to negative or positive charge trapping. The induced positive and negative charge magnitude and location dependence on the injection conditions are measured and analyzed.

ISSN:0003-6951    

DOI:10.1063/1.94795

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A strong ⟨100⟩ texture has been achieved in cw neodymium:yttrium aluminum garnet laser recrystallization of the 700 °C low pressure chemical vapor deposited (LPCVD) polycrystalline silicon films which exhibit ⟨100⟩ preferred orientation. When ⟨110⟩ texture is dominant in as‐deposited films, the ⟨100⟩ texture is not so strong as in the 700 °C LPCVD films. The dependence of the ⟨100⟩ texture on as‐deposited film structure implies that the ⟨100⟩ grain growth occurs under such a melting condition as the initial film structure is partially maintained.

ISSN:0003-6951    

DOI:10.1063/1.94770

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Device‐quality Hg1−xCdxTe (0.2≤x≤0.35) epitaxial layers have been grown on CdTe substrates by open‐tube isothermal vapor phase epitaxy (ISOVPE). The surface morphology of the layers is mirrorlike, and the Hall data are comparable to those for HgCdTe grown by liquid phase epitaxy (LPE). Photovoltaic devices with a cutoff wavelength of 4.1 &mgr;m at 77 K were fabricated on an ISOVPE HgCdTe epilayer. Their performance is comparable with those that we have obtained for such devices fabricated on LPE HgCdTe epilayers.

ISSN:0003-6951    

DOI:10.1063/1.94796

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Using the electron beam induced current mode of the scanning electron microscope, a technique has been developed to study the extent of hydrogen passivation and diffusion along grain boundaries in silicon ribbon grown by the edge‐defined film‐fed growth process. Passivation and diffusion depthsx, ranging from a few microns to more than 200 microns have been found. Grain boundary diffusivities of 10−8–10−9cm2/s have been measured. A finite width to the spatial distribution of recombination centers along the grain boundaries has been found and measurements of the surface recombination velocityS, indicate that, forS≥2×104cm/s, ln S∝x.

ISSN:0003-6951    

DOI:10.1063/1.94797

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Transmission electron microscopy and photoluminescence data are used to show that asingleGaAs quantum well (Lz≊70 A˚) confined by Alx′Ga1−x′As (x′∼0.3) layers can, via low‐temperature (600 °C) Zn diffusion, be interdiffused (‘‘absorbed’’) into the confining layers (impurity‐assisted Al‐Ga interdiffusion) and be shifted to higher gap (x=0→x′∼0.3) without damaging the crystal or ruining its capability to operate as a continuous 300‐K low threshold photopumped laser.

ISSN:0003-6951    

DOI:10.1063/1.94798

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We demonstrate the use of Raman spectroscopy with a multichannel detector to characterize the growth of PtSi on Si(100). The vibrational modes of surface silicide layers as thin as 10 A˚ and PtSi layers less than 40 A˚ thick buried under 140 A˚ of Pt have been observed without the need for any special sample geometry for signal enhancement. The Raman spectra can identify the silicide layer, estimate its thickness, and demonstrate its crystalline quality. This can be done on an arbitrary substrate, in air and without any special sample preparation.

ISSN:0003-6951    

DOI:10.1063/1.94755

出版商:AIP    

年代:1984

数据来源: AIP