摘要:

Atomic layer epitaxy has been employed to produce good‐quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture and excellent photoluminescence characteristics. They showed dominant excitonic emission lines and a very weak deep center emission band.

ISSN:0003-6951    

DOI:10.1063/1.96834

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

AlGaAs visible surface light‐emitting diodes (LED’s) on silicon substrates have been successfully fabricated by use of the metalorganic chemical vapor deposition technique. The emission spectrum of the LED peaked at 700 nm with a half‐width of 45 nm at the forward current of 100 mA at room temperature. The external efficiency was 0.3%.

ISSN:0003-6951    

DOI:10.1063/1.96835

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Calculations show that phase nonlinearity in 1 &mgr;m gate length power GaAs metal‐semiconductor field‐effect transistors (MESFET’s) can be accounted for by the variation of gate‐channel capacitance with gate bias voltage. Buried‐layer GaAs MESFET’s having constant gate‐channel capacitance have been fabricated and their high‐frequency linearity measured. The devices display dramatic reductions of phase nonlinearity to 0.15°/W output power at 6 GHz for powers below saturation in 8 mm gate‐width devices confirming that nonlinear capacitance causes nonlinearity observed in conventional GaAs MESFET’s. Channel transit time, estimated at 3–6 ps, is not significant as a cause of nonlinearity and varies less than 100 fs with signal level.

ISSN:0003-6951    

DOI:10.1063/1.96836

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A new approach for capless rapid thermal annealing of ion implanted III‐V semiconductors, the enhanced overpressure proximity (EOP) technique, has been developed and applied to GaAs implanted with Si+. The EOP method relies on the use of a Sn‐coated GaAs wafer to provide a localized arsenic overpressure around the ion implanted wafer during the annealing cycle. The arsenic overpressure resulting from this arrangement is greater than the overpressure obtained with the conventional proximity method, which utilizes an untreated GaAs wafer as an arsenic source. This new annealing technique has yielded higher electrical activation and electron mobilities in GaAs than the conventional proximity method as well as an increased latitude in annealing times and temperatures. The EOP approach can be easily extended for capless rapid thermal annealing of other III‐V compounds such as InP and InGaAs.

ISSN:0003-6951    

DOI:10.1063/1.96837

出版商:AIP    

年代:1986

数据来源: AIP