摘要:

Experimental results are reported concerning temperature effects from 25 to 125 °C on Schottky‐barrier solar cells which were fabricated using a semitransparent Cu/Cr barrier metal layer onp‐type silicon. The open‐circuit voltage decreased by 2.3 mV/°C and the fill factor by 0.11&percent;/°C, while the short‐circuit current increased slightly with increased temperature. These results are consistent with previous work onp‐n–junction silicon solar cells. The diode quality factornwas shown to decrease with increased temperature, as predicted by field emission theory. The room‐temperature photovoltaic output of cell 96 remained at 0.54 V, 25.4 mA/cm2, and 8.5–10.6&percent; efficiency using 80–100‐mW/cm2sunlight illumination after repeated temperature cycling.

ISSN:0003-6951    

DOI:10.1063/1.88044

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Auger spectroscopy has shown that the divalent cation impurities Zn++, Cd++, and Pb++in the concentration range above 0.1&percent; segregate to the surface of silver halide films. Sputtering of the films shows a layer approximately 10 A˚ thick at the film‐vacuum interface where the impurities accumulate. The surface ratio of impurity to silver ion increases with the total amount of impurity present.

ISSN:0003-6951    

DOI:10.1063/1.88045

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Energy barrier heights at the interfaces of metal–silicon nitride–silicon structures have been measured by internal photoemission as a function of metal electrode material and substrate doping. These measurements have been interpreted in terms of a dominant hole internal photoemission mechanism. Hole energy barriers from the Au, Al, or Mg Fermi level and the Si valence band to the Si3N4valence band were found to be 1.9±0.1, 3.0±0.1, 4.0±0.1, and 2.1±0.1 eV, respectively.

ISSN:0003-6951    

DOI:10.1063/1.88046

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

We have produced tunable phase‐matched second‐harmonic radiation in a KB5O8⋅4H2O crystal between 217.3 and 234.5 nm. Phase matching was achieved by crystal rotation. We also studied frequency doubling in NH4B5O8⋅4H2O.

ISSN:0003-6951    

DOI:10.1063/1.88047

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

p‐njunction diodes have been prepared by the ion implantation of Cd intop‐type CuInSe2. Electroluminescence is observed near 1.3 &mgr; with internal quantum efficiency of 15&percent; at 77 °K and ∼0.1&percent; at room temperature. The photovoltaic response of typical diodes has a quantum efficiency of 60–70&percent; in the wavelength region 0.7–1.1 &mgr;.

ISSN:0003-6951    

DOI:10.1063/1.88048

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

We report the first observation of a large ballistic effect in the gradient propagation of magnetic bubble domains in high‐mobility garnet films. Using high‐speed laser photography to measure bubble position as a direct function of time, we observe a large displacement after the gradient pulse has turned off, with a relaxation time of several microseconds.

ISSN:0003-6951    

DOI:10.1063/1.88049

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

We have investigated the dynamics of magnetic domain walls in three epitaxial garnet films withgvalues of 1.07, 4.8, and ≳30, and having wall mobilities of 880, 930, and 820 cm/sec Oe, respectively. Bubble collapse measurements in the films withg=1.07 and 4.8 showed velocity saturation with the approximate values 1500 and 8000 cm/sec, respectively. The film withg≳30 showed no saturation, and velocities up to 6×104cm/sec were observed. These results are consistent with the expected increase in the Slonczewski and Walker critical velocities with increasinggvalue. Largegvalues make it possible to operate magnetic bubble circuits at higher frequencies than is otherwise the case.

ISSN:0003-6951    

DOI:10.1063/1.88050

出版商:AIP    

年代:1975

数据来源: AIP