摘要:

The time dependence of the output of a high‐energy HCN laser has been studied with an indium antimonide detector. At a CH3CN partial pressure of 0.24 torr, three separate infrared pulses are emitted during a 250 &mgr;sec time interval after the current pulse. The addition of He, A, O2or H2changes both the number and delay between the pulses. As many as six pulses approximately 90 &mgr;sec apart in a 450 &mgr;sec period are observed with a He&sngbnd;CH3CN gas mixture.

ISSN:0003-6951    

DOI:10.1063/1.1651893

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

The amplitude of the third harmonic of an initially sinusoidal ultrasonic wave is measured in the [100] direction in copper, both directly and by a pulse overlap technique. The value of the third‐order elastic constantC111=−16 × 1012dyn/cm2is obtained from measurements of third harmonic amplitudes of the order of 10−3Å. The contribution of the fourth‐order constantC1111to these amplitudes appears to be negligible.

ISSN:0003-6951    

DOI:10.1063/1.1651894

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

MOS transistors, with aluminum oxide as gate insulator, have been fabricated. The Al2O3films were formed by first depositing aluminum on freshly cleaned 10 &OHgr;‐cm silicon and then anodizing the aluminum in an oxygen plasma. All other steps used standard silicon technology. Electron diffraction showed that the insulator films are amorphous. The index of refraction is between 1.67 and 1.70 and the relative dielectric constant is 7.6. The devices have a threshold voltage of between ±0.5 V, and an interface state density of about 2 × 1010states/cm2‐eV. No evidence for ionic motion under positive bias was found at elevated temperatures. Under 1 MeV electron bombardment at various fluence levels and bombardment biases these devices showed excellent radiation resistance. Their radiation behavior is better than that observed for MNS or ``hardened SiO2'' devices.

ISSN:0003-6951    

DOI:10.1063/1.1651895

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

The velocity field characteristics of electrons in germanium were measured in a range of temperatures between 33°K and 130°K and the electric field along the ⟨ 100 ⟩ orientation of the crystal. At 33°K a negative differential mobility of 300 cm2/V‐sec was observed with a threshold field of 1.5 kV/cm. The negative differential mobility decreases with increasing temperature. At 130°K there is definitely no negative differential mobility.

ISSN:0003-6951    

DOI:10.1063/1.1651896

出版商:AIP    

年代:1968

数据来源: AIP