摘要:

The redissolution behavior of precipitated oxygen in Czochralski‐grown silicon wafers during high‐temperature annealing (1230 °C) is investigated by means of infrared absorption and transmission electron microscopy. It is shown that the oxygen redissolution rate, which is 102∼103larger than the precipitation rate, is highly dependent on the oxygen precipitation temperature which in turn determines the form of the precipitates. The dependence is described by the difference in the total surface area of precipitates and by the dislocation pinning effect.

ISSN:0003-6951    

DOI:10.1063/1.92636

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Beryllium‐implanted liquid phase epitaxyn‐AlGaAs layers have exhibitedp‐njunction behavior after annealing. Graded or abrupt junction behavior was found to be implant fluence dependent. Secondary ion mass spectrometry Be concentration profiles indicate that the graded junctions observed for the higher fluence implants were due to in‐depth migration of Be. Mesa diodes have shown ideality factors of about 2 and avalanche breakdown in reverse bias.

ISSN:0003-6951    

DOI:10.1063/1.92637

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A memory cell is proposed which uses vortices in type‐II superconductor thin film as information bits. In the memory cell, vortices are generated by coincident current in two superconductor lines and are read out by a Josephson junction. Preliminary experimental results on vortex generation and detection are also reported.

ISSN:0003-6951    

DOI:10.1063/1.92638

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Recent advances in the technology of ultrasmall Josephson junctions focus interest on the scaling characteristics of these devices. We examine the size dependence of the pair current, the rms noise current as well as the voltage fluctuations of ultrasmall junctions, and find novel scaling behavior. Among other things, the low‐temperature zero voltage, dc pair current depends on the cube of the junction area.

ISSN:0003-6951    

DOI:10.1063/1.92639

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Distortions which occur in secondary ion mass spectrometry (SIMS) concentration profiles have been studied with samples of Si(Bi) calibrated by Rutherford Backscattering. It is shown that with normal incidence oxygen ion bombardment over the energy range 1–6 keV per atom, the SIMS profile is broadened due to ion beam matrix effects. The true profile shape can be extracted from the energy dependence of the profile width. Profile broadening has also been observed with Si(In) and Si(Sb) but not with Si(B). The observed broadening cannot be explained simply by collisional mixing of the target atoms.

ISSN:0003-6951    

DOI:10.1063/1.92640

出版商:AIP    

年代:1981

数据来源: AIP