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21. |
Quantum capacitance of resonant tunneling diodes |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 167-169
Yuming Hu,
Shawn Stapleton,
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摘要:
We have developed a method for evaluating the capacitance created from charges stored in the quantum well. This capacitance is currently calculated by using the formula for a parallel‐plate capacitor. We have shown that the simple formula for a parallel‐plate capacitor is invalid for this estimation. Our method, which is based on the damped resonant tunneling model, predicts that the capacitance due to the charges stored in the well is about two to three orders of magnitude smaller than that previously estimated.
ISSN:0003-6951
DOI:10.1063/1.104961
出版商:AIP
年代:1991
数据来源: AIP
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22. |
High quality Fe‐doped semi‐insulating InP epitaxial layers grown by low‐pressure organometallic vapor phase epitaxy using tertiarybutylphosphine |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 170-172
Rong‐Ting Huang,
Ami Appelbaum,
Daniel Renner,
Stanley W. Zehr,
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摘要:
High quality Fe‐doped semi‐insulating InP epitaxial layers were grown by low‐pressure organometallic vapor phase epitaxy using tertiarybutylphosphine (TBP) and triethylindium (TEI) as the reactant sources. Semi‐insulating InP epitaxial layers with specular surface morphology and low defect density were obtained at TBP partial pressure higher than 0.38 Torr. Electrical measurements on these layers showed the resistivity of TBP‐grown materials to be comparable to that of PH3‐grown materials over a measurement temperature range of 25 to 110 °C. A premature reaction between TEI and TBP was observed upstream from the substrate in which things such as TEI:TBP adducts and/or polymers could have been formed. This reaction occurred under low pressure, high gas flow conditions which effectively suppressed analogous reactions for TEI:PH3. As a result, the growth rate of Fe‐doped semi‐insulating InP layers grown at low pressure with TBP in our reactor decreased by 35% as the V/III ratio was increased from 15 to 46.
ISSN:0003-6951
DOI:10.1063/1.104962
出版商:AIP
年代:1991
数据来源: AIP
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23. |
Impulse compression using soliton effects in a monolithic GaAs circuit |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 173-175
Michael Case,
Masayuki Kamegawa,
Ruai Yu,
M. J. W. Rodwell,
Jeff Franklin,
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摘要:
A monolithic GaAs impulse compressor circuit which utilizes soliton wave propagation effects in nonlinear transmission lines has been fabricated. The circuits compress a 20 dBm, 8 GHz sinusoid to a train of 3.9 V peak to peak, 5.5 ps full width at half maximum impulses.
ISSN:0003-6951
DOI:10.1063/1.104963
出版商:AIP
年代:1991
数据来源: AIP
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24. |
Effect of beryllia substitution and addition in a YBa2Cu3O7−&dgr;compound |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 176-178
K. V. Paulose,
J. Koshy,
K. Ravindran Nair,
A. D. Damodaran,
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摘要:
The effect of BeO substitution and addition in the superconducting properties of YBa2Cu3O7−&dgr;superconductors has been investigated by temperature resistance measurements and x‐ray diffraction studies. The results revealed that the substitution or addition of BeO in YBa2Cu3O7−&dgr;does not have much detrimental effect on the superconducting properties. Because of this nonpoisoning behavior, beryllia is suggested as a suitable substrate material for the production of superconducting thin films.
ISSN:0003-6951
DOI:10.1063/1.104964
出版商:AIP
年代:1991
数据来源: AIP
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25. |
Lateral force on a magnet placed above a planar YBa2Cu3Oxsuperconductor |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 179-181
T. H. Johansen,
Z. J. Yang,
H. Bratsberg,
G. Helgesen,
A. T. Skjeltorp,
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摘要:
The lateral force interaction between a permanent bar magnet and a large slab of highTcsuperconductor has been investigated at 77 K, under conditions of a constant vertical separation of 2 mm. The restoring force as a function of lateral displacement rises very steeply, and reaches 90% of its saturation value, 5.1 mN, after 1.8 mm. The profile of the force‐displacement curve is in qualitative agreement with the existing theory. A significant quantitative discrepancy is interpreted as due to a theoretical penetration depth exceeding the sample thickness. The lateral magnetic stiffness or spring constant, is found to be independent of displacement away from lateral equilibrium.
ISSN:0003-6951
DOI:10.1063/1.104965
出版商:AIP
年代:1991
数据来源: AIP
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26. |
Phase‐selective route to highTcsuperconducting Tl2Ba2Can−1CunO2n+4films: Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry‐controlled thallium vapor diffusion |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 182-184
Graziella Malandrino,
Darrin S. Richeson,
Tobin J. Marks,
Donald C. DeGroot,
Jon L. Schindler,
Carl R. Kannewurf,
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摘要:
Films of the Tl2Ba2Can−1CunO2n+4highTcsuperconductors (n=2 or 3) can be prepared with a high degree of phase selectivity using a combination of metalorganic chemical vapor deposition (MOCVD) and vapor diffusion. Ba‐Ca‐Cu‐O films are first prepared by MOCVD using the volatile metalorganic precursors Ba(hexafluoroacetyl‐ acetonate)2(tetraglyme), Ca(dipivaloylmethanate)2, and Cu(acetylacetonate)2. The ‘‘second‐generation’’ barium precursor exhibits significantly improved thermal stability and volatility over previously used compounds. Thallium is then incorporated into these films by vapor diffusion using a Tl‐Ba‐Ca‐Cu oxide mixture of controlled composition as the source of volatile thallium oxides. Phase control is achieved by a combination of improved stoichiometry of the deposited film, a result of the new Ba source, and annealing with the appropriate oxide mixture. The resultant films consist predominantly of the Tl2Ba2Ca2Cu3Oxor Tl2Ba2CaCu2Oxphase, each having preferential orientation of the crystallite Cu‐O planes parallel to the substrate surface. The films exhibit superconducting onset temperatures of ∼115 K with zero resistance by 93 and 85 K, respectively. Critical current densities for a number of films, estimated by the Bean method, are in the range 104–105A/cm2at 5 K.<lz> <lz> <lz> <lz> <lz> <lz> <lz>
ISSN:0003-6951
DOI:10.1063/1.104966
出版商:AIP
年代:1991
数据来源: AIP
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27. |
Epitaxial thin films of YBa2Cu3O7−xon LaAlO3substrates deposited by plasma‐enhanced metalorganic chemical vapor deposition |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 185-187
C. S. Chern,
J. Zhao,
Y. Q. Li,
P. Norris,
B. Kear,
B. Gallois,
Z. Kalman,
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PDF (344KB)
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摘要:
High quality epitaxial YBa2Cu3O7−x(YBCO) superconducting thin films (0.3 &mgr;m thick) were grown on the closely lattice and thermal expansion matched substrate, LaAlO3, which has low dielectric loss. The YBCO layers were prepared,insitu, by a microwave plasma‐enhanced metalorganic chemical vapor deposition process. The films, which had mirror‐like smooth surfaces, were deposited at a substrate temperature of 730 °C with a partial pressure of 2 Torr of N2O. The electrical resistance and magnetic susceptibility versus temperature of the as‐deposited films show metallic behavior in the normal state and sharp superconducting transitions withTc(R=0) of 88 K. Critical current densities measured on patterned bridges were 5×105A/cm2at 78 K for the films deposited on LaAlO3. X‐ray diffraction measurements indicate that films grow epitaxially in the plane of the substrate with axis perpendicular to the substrate surface.
ISSN:0003-6951
DOI:10.1063/1.104973
出版商:AIP
年代:1991
数据来源: AIP
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28. |
Microstructure of the highTcphase (Tc∼111 K) in the Sb‐Pb‐Bi‐Sr‐Ca‐Cu‐O system |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 188-190
Naoto Kijima,
Ronald Gronsky,
Hozumi Endo,
Yasuo Oguri,
Steffen K. McKernan,
Alex Zettl,
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摘要:
The microstructure of the highTcphase (Tc∼111 K) in the Sb‐Pb‐Bi‐Sr‐Ca‐Cu‐O system has been determined using transmission electron microscopy. Its crystal structure belongs to the superspace groupNBbmb11¯1, NBb2b111,PBbmb11¯1orPBb2b111with subcell lattice parametersa=5.411(1) A˚,b=5.411(1) A˚, andc=37.22(6) A˚. The highTcphase has a modulated structure withb‐axis wavelengths 26.9 and 36.1 A˚. Stacking faults along thecaxis in the highTcphase are much less numerous than in the Bi‐Sr‐Ca‐Cu‐O system, but comparable to the Pb‐Bi‐Sr‐Ca‐Cu‐O system. Sb substitution for Ca may affect the internal strain of the crystal.
ISSN:0003-6951
DOI:10.1063/1.104944
出版商:AIP
年代:1991
数据来源: AIP
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29. |
Dielectric enhancement layers for a Pt/Co multilayer magneto‐optical recording medium |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 191-193
P. F. Carcia,
M. Reilly Co. (Inc.),
W. B. Zeper,
H. W. van Kesteren,
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摘要:
Transparent ZnO with an optical index of refractionn∼2 is a suitable candidate for a dielectric enhancement layer in a magneto‐optical disk. Surprisingly, sputtering a Pt/Co multilayer on a ZnO layer not only increased the optical Kerr rotation but also increased the magnetic coercivity and improved the rectangular magnetic loop shape. Sputter etching the dielectric surface prior to the metal deposition also improved magnetic properties.
ISSN:0003-6951
DOI:10.1063/1.104945
出版商:AIP
年代:1991
数据来源: AIP
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30. |
Small‐divergence electron beams produced by multiphoton excitation of metallic surfaces |
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Applied Physics Letters,
Volume 58,
Issue 2,
1991,
Page 194-196
S. D. Moustaizis,
M. Tatarakis,
A. G. Doukas,
C. Fotakis,
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摘要:
The angular distribution of photoelectrons produced by laser‐induced four‐photon excitation in gold metalic targets is reported. Laser‐target interaction time effects have been investigated by using two Nd:YAG lasers emitting at 1.06 &mgr;m pulses of 35 ps and 20 ns duration. Both lasers produced four‐photon electron angular distributions of 9°±2° full width at half maximum. This width was independent from the intensity of the picosecond laser up to the breakdown threshold at a laser intensity of 1.4 GW/cm2. In contrast, the distribution produced by the nanosecond pulses was broadened at intensity levels higher than 60 MW/cm2, which is indicative of a significant contribution from thermionic emission. These results are compared to those obtained by D. Charalambidis, E. Hontzopoulos, C. Fotakis, Gy. Farkas, and Cs. To´th [J. Appl. Phys.65, 2843 (1989)], for single photon excitation by using a KrF excimer laser.
ISSN:0003-6951
DOI:10.1063/1.104946
出版商:AIP
年代:1991
数据来源: AIP
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