摘要:

Effects of rapid thermal processing (RTP) on 200‐nm‐thick SiO2/GaAs interfaces have been studied with x‐ray photoelectron spectroscopy. RTP has been performed at 910 °C for 9 s with the heating rate of 53 °C/s. Rapid diffusion of Ga through SiO2occurs. The diffusion coefficient of Ga in SiO2for RTP is found to be about two orders of magnitude larger than that for conventional furnace processing. The heating rate dependence of the Ga outdiffusion is also reported in the range 31–83 °C/s. In addition, slight loss of As is observed. These results are discussed on the basis of the RTP‐induced thermal stress between SiO2and GaAs.

ISSN:0003-6951    

DOI:10.1063/1.101544

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Solid phase epitaxial (SPE) crystallization of amorphous GaAs on (100) Si tilted by 4° toward ⟨011⟩ formed by molecular beam deposition (MBD) was first achieved by cw Kr laser irradiation for short durations. The ratio of As to Ga (y/x) in deposited amorphous GaxAsyfilms was varied from 0.4 to 1.2. During the laser irradiation, movement of the amorphous/crystalline interface was measured using time‐resolved optical reflectivity (TROR). It was found from TROR and micro‐Raman scattering measurements that hetero‐SPE is attained in samples with As/Ga ratios ranging from 0.8 to 1.1 and that the interface roughness is larger than that observed in homo‐SPE (e.g., MBD GaAs on GaAs and P+ion‐implanted GaAs).

ISSN:0003-6951    

DOI:10.1063/1.101050

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

(NH4)2Sx‐treated GaAs (100) surfaces were heated in an ultrahigh vacuum. Reflection high‐energy electron diffraction (RHEED) and Ga, As, S, and O x‐ray photoelectron spectroscopic (XPS) changes were observed. The sulfide‐treated surface showed a streaky 1×1 RHEED pattern without heating. A 2×1 RHEED pattern appeared during heating to 260 and 420 °C. At these temperatures, the S XPS peak was still observed. The 2×1 pattern is thought to be S induced. On the (NH4)2Sx‐treated surface, no oxidized As XPS signal was observed. Moreover, the O XPS peak disappeared rapidly during the heating above 260 °C. These results suggest that the 2×1 S structure caused the GaAs (100) surface passivation.

ISSN:0003-6951    

DOI:10.1063/1.101051

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

High quality GaAs films with dislocation densities of (1–2)×106cm−2on (100) Si substrates have been obtained for a combination of strained‐layer superlattice (SLS) insertion such as InGaAs/GaAs, InGaAs/GaAsP, and AlGaAs/GaAs and thermal cycle annealing using the metalorganic chemical vapor deposition method. Remarkable reduction effects of dislocation density and dislocation generation in the GaAs layers due to SLS insertion on Si have been analyzed by a simple model, in which coalescence and generation of dislocations are assumed to be caused by dislocation motion under misfit stress of SLSs. Misfit stress dependence of dislocation density reduction in GaAs films on Si has been clarified using this model.

ISSN:0003-6951    

DOI:10.1063/1.101052

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

A strained layer of Si1−xGex(As)/Si has been grown by molecular beam epitaxy (MBE) with the As dopant introduced by 1 keV ion implantation during growth. Analysis of the layer was made using secondary‐ion mass spectrometry (SIMS), Rutherford backscattering (RBS), and proton‐induced x‐ray emission (PIXE)/channeling, using 2 MeV H+ions. The layer thickness (∼1.4 &mgr;m) and composition (x∼0.015;nAs∼6×1018cm−3) measurements by SIMS, RBS, and PIXE were in agreement. RBS, PIXE/channeling showed that the crystalline quality of the strained layer was equivalent to that of the Si substrate. The substitutional fraction (∼0.75) of the As dopant was determined by PIXE/channeling.

ISSN:0003-6951    

DOI:10.1063/1.101364

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

The acoustic emission generated during a thermoelastic martensitic transformation, undergone by a trained Cu‐Zn‐Al alloy, has been simultaneously detected on four faces of a quasi‐cubic sample with well‐determined crystallographic orientations. The results, interpreted using the dynamic Green’s function formalism for elastic continuum media, provide the first experimental evidence that the acoustic source for thermoelastic martensitic transformations can be described in terms of a shear and a volume change effect.

ISSN:0003-6951    

DOI:10.1063/1.101053

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Measurements of the median time to failure (MTTF) and deviation in the time to electromigration‐induced failure (DTTF) of Al alloy thin‐film lines are reported. As the ratio of the linewidth to the grain size decreases, MTTF decreases to a minimum and then increases exponentially. DTTF continuously increases. We show that serial and parallel failure unit models can be used to explain the grain size and linewidth dependence of the MTTF and DTTF for interconnects. We further note that extrapolation to low cumulative failures based on serial failure models must be based on knowledge of the failure statistics of individual units.

ISSN:0003-6951    

DOI:10.1063/1.101054

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

We report the first observation of photoluminescence from CdTe/Hg1−yCdyTe/Hg1−xCdxTe (y>x) separate confinement heterostructures grown by molecular beam epitaxy. The spectral shape is determined by the band filling of electrons in the well which is due to a charge transfer effect. There is an appearance of high‐energy transitions at high temperatures. The strong photoluminescence from the layer is highly promising for the observation of the laser action.

ISSN:0003-6951    

DOI:10.1063/1.101055

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

We have measured the pressure dependence of the solid phase epitaxial growth rate of self‐implanted Si (100) by using theinsitutime‐resolved interferometric technique in a high‐temperature and high‐pressure diamond anvil cell. With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed provides a uniform temperature across the sample. At temperatures in the range of 530–550 °C and pressures up to 3.2 GPa (32 kbar), the growth rate is enhanced by up to a factor of 5 over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately −3.3 cm3/mole (−28% of the atomic volume). These results show a significantly weaker pressure dependence than does the previous work of Nygrenetal. [Appl. Phys. Lett.47, 232 (1985)], who found an activation volume of −8.7 cm3/mole. The implication of this measurement for the nature of the defects responsible for crystal growth is discussed.

ISSN:0003-6951    

DOI:10.1063/1.101056

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Layers of Ga0.47In0.53As grown on InP by a beam epitaxy method have been doped with Be top=5×1020cm−3by growth at substrate temperatures as low as 365 °C. The maximum doping level is strongly growth temperature dependent. Heterostructure bipolar transistors with base dopingp=1×1020cm−3, current gain &bgr;=54, and unity current gain cutoff frequencyfT=140 GHz are illustrated.

ISSN:0003-6951    

DOI:10.1063/1.101057

出版商:AIP    

年代:1989

数据来源: AIP