摘要:

Undoped‐polycrystalline GaAs layers were deposited on Mo layers by metalorganic chemical vapor deposition and annealed by pulse laser irradiation. The laser used here was aQ‐switched ruby laser and the annealing was done by immersing the samples in SnCl2‐dissolved methanol. Then, recrystallization and doping of the GaAs layers were successfully done. The Schottky characteristics were observed between the top GaAs layer and the Mo layer underneath; the barrier height was 0.53 eV.

ISSN:0003-6951    

DOI:10.1063/1.93819

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The performance of a photoconductive device in which an evaporated CdSe film is used as the semiconductor medium is described. The results indicate an ultrafast response and a recovery time ∼20 ps.

ISSN:0003-6951    

DOI:10.1063/1.93820

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

We have measured the infrared transmission at 3.39 &mgr;m, for bulk Si and Si:Au and for silicon on sapphire during pulsed laser annealing. The transmission drops sharply and remains near zero for approximately 100 ns in all samples. The infrared transmission in bulk Si requires milliseconds to completely recover. We attribute this effect to a thermally induced change in the index of refraction of the silicon and associated tuning of the Fabry–Perot cavity formed by the faces of the Si wafers. Our experiments yield no evidence for an optical gap as expected for a Bose condensed exciton phase, and thus are supportive of the thermal melting model of laser annealing.

ISSN:0003-6951    

DOI:10.1063/1.93821

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Electronic defect levels in amorphous silicon Schottky diodes have been measured by capacitance transient spectroscopy performed in the constant capacitance mode. In hydrogenated amorphous silicon deep levels are continuously distributed in energy and of sufficient density to dominate the electrical properties. The constant capacitance mode, applied for the first time to an amorphous semiconductor, offers significant advantages over the transient capacitance mode for measuring the bulk density of gap states. For example, numerical solution of Poisson’s equation for only the steady‐state charge distribution is required to analyze the transient response of a diode after a trap‐filling voltage pulse. The technique has been used to record time‐resolved transients, which saturate with respect to pulse width, and the analysis yields deep level distributions in the range of 1017eV−1 cm−3over the energy interval from 0.6 to 0.9 eV below the conduction‐band mobility edge.

ISSN:0003-6951    

DOI:10.1063/1.93822

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Knowledge of the infrared optical constants of PtSi is required for quantum yield calculations of Schottky barrier IR imagers with PtSi electrodes. We employ Rutherford backscattering spectrometry to identify the PtSi phase and calculate the infrared optical constants from reflectance data by a Kramers–Kronig analysis technique. Several examples of quantum yield calculations for different imager structures using the calculated optical constants are given.

ISSN:0003-6951    

DOI:10.1063/1.93823

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The electrical characteristics of amorphous Fe‐W contacts have been determined on bothp‐type andn‐type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, &rgr;c=1×10−7and &rgr;c=2.8×10−6, were measured onn+andp+silicon, respectively. These values remain constant after thermal treatment up to at least 500 °C. A barrier height, &fgr;Bn=0.61 V, was measured onn‐type silicon.

ISSN:0003-6951    

DOI:10.1063/1.93824

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Dramatic differences were observed between the room‐temperature reactivity of benzene on cleaved Si and on cleaved Ge and GaAs with synchrotron‐radiation photoemission. No evidence of benzene adsorption was observed on Ge or GaAs. On Si we unexpectedly observed a strongly bound state, probably due to the formation of phenylic‐like C–Si bonds.

ISSN:0003-6951    

DOI:10.1063/1.93825

出版商:AIP    

年代:1983

数据来源: AIP