摘要:

The energy spectrum of MOS interface states and the capture cross section for holes have been measured inp‐type silicon by transient capacitance spectroscopy. In MOS capacitors with interface state densities of <1010cm−2 eV−1near midgap, the density decreases with energy towards the valence‐band edge over the measurement range of 0.17 <E−Ev<0.6 eV. The capture cross section for holes is of the order of 5×10−13cm2and is independent of temperature and energy. It appears that the measured distribution consists of acceptor states that extend from the conduction band into the lower half of the silicon forbidden band. The absence of a detectable signal from interface states in a valence‐band tail implies that the capacitance transient for hole emission is outside the measurement range. A sharply peaked signal observed for electron (minority carrier) capture at high temperatures indicates that these states are present, but have an extremely low capture cross section for holes, ⩽10−23cm2.

ISSN:0003-6951    

DOI:10.1063/1.89774

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Facet damage which is one of the major mechanisms of slow degradation has been virtually eliminated with Al2O3facet coatings. Al2O3half‐wave films deposited by the conventional CVD method have been found to be effective not only for minimizing facet erosion but also for increasing the catastrophic failure limit by about a factor of 2.

ISSN:0003-6951    

DOI:10.1063/1.89775

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The slow degradation of single‐heterostructure Ga1−xAlxAs LED’s has been investigated. The samples which show the fast degradation are completely rejected by the selection of DLD‐free LED’s. Selection procedures and the results of accelerated aging tests for over 10 000 h are presented. The activation energy of the slow degradation is found to be 0.57 eV. Extrapolated room‐temperature half‐life in excess of 5×106h is estimated. The degradation coefficients are not affected significantly by the operating current density (3.5–10 kA/cm2).

ISSN:0003-6951    

DOI:10.1063/1.89776

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Conversion efficiencies as high 15.3% (17% when corrected for contact area) have been obtained for single‐crystal antireflection‐coated GaAs solar cells fabricated without the use of Ga1−xAlxAs layers. These devices employ a thinn+/p/p+structure prepared by chemical vapor deposition, in which surface recombination losses are reduced because then+layer is so thin (1300 A˚) that most of the carriers are generated in theplayer below the junction.

ISSN:0003-6951    

DOI:10.1063/1.89777

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

GaAs electroabsorption avalanche photodiodes inn‐n+GaAs waveguides have been used to detect the 1.06‐&mgr;m radiation from a Nd : YAG laser with a responsivity of 125 A/W and an internal quantum efficiency of 23%. The response at this wavelength is due to a combination of band‐to‐band and defect‐to‐band electroabsorption.

ISSN:0003-6951    

DOI:10.1063/1.89778

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The effect of substrate temperatureTsduring evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher‐temperature anneal has been investigated by transmission electron microscopy. ForTsof 20 and 100 °C, the Pd2Si grows epitaxially on the substrate. For aTsof 200 °C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For aTsof 300 °C, the microstructure of Pd2Si is spongy and grains are much less oriented.

ISSN:0003-6951    

DOI:10.1063/1.89779

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

An experimental study of tunneling currents in thin multilayers of Al‐Al2O3has been performed. Negative resistances are observed at 77 °K in a triple‐barrier structure. It is considered that these negative resistances are caused by the effect of resonant tunneling, compared to the theoretical consideration of quasistationary energy levels in such a structure.

ISSN:0003-6951    

DOI:10.1063/1.89780

出版商:AIP    

年代:1977

数据来源: AIP