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31. |
Deposition and annealing of ion beam sputtered Y‐Ba‐Cu‐O superconducting films |
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Applied Physics Letters,
Volume 55,
Issue 5,
1989,
Page 501-503
S. D. Bernstein,
R. W. Tustison,
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摘要:
Highly oriented, near‐stoichiometric films of YBa2Cu3O7−&dgr;have been deposited onto (100) MgO, (100) yttria‐stabilized zirconia, and (110) SrTiO3by ion beam sputtering from a single, off‐stoichiometric target. Their crystal structure and resistance behavior were found to depend on the crystallization temperature of a two‐step post‐deposition anneal, which was varied from 750 to 1000 °C. The highest zero‐resistance temperature (73 K) and degree of preferred orientation was observed for a film which was deposited on (100) MgO and annealed for a short time at 950 °C.
ISSN:0003-6951
DOI:10.1063/1.102430
出版商:AIP
年代:1989
数据来源: AIP
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32. |
Superconducting films growninsituby the activated reactive evaporation process |
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Applied Physics Letters,
Volume 55,
Issue 5,
1989,
Page 504-506
S. Prakash,
D. M. Umarjee,
H. J. Doerr,
C. V. Deshpandey,
R. F. Bunshah,
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摘要:
The low‐pressure activated reactive evaporation process was used successfully to grow superconducting thin films that were uniform in thickness, free of cracks, voids, spits, and other source‐related defects, and with mirror‐like surface smoothness. These are important considerations for the practical use of these materials in thin‐film form. No post‐deposition annealing was carried out.Tc(0) for films on yttria‐stabilized zirconia (YSZ) substrates is close to 80 K, and the (001) preferred orientation was observed with higher deposition temperatures in the range 550–650 °C. Films on silicon and sapphire substrates were adversely affected by interdiffusion, showing aTc(0) of 56 and 72 K, respectively.
ISSN:0003-6951
DOI:10.1063/1.101571
出版商:AIP
年代:1989
数据来源: AIP
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33. |
Oxygen ion irradiation of Tl2Ca2Ba2Cu3O10superconductors |
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Applied Physics Letters,
Volume 55,
Issue 5,
1989,
Page 507-509
J. C. Barbour,
J. F. Kwak,
D. S. Ginley,
P. S. Peercy,
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摘要:
The superconducting transport properties of polycrystalline Tl2Ca2Ba2Cu3O10thin films irradiated with 740 keV oxygen ions were monitored as a function of fluence. Both the transition temperature (Tc) and the critical current density (Jc) decreased rapidly with fluence; however, the transition temperature onset remained constant. A fluence of 2×1014O/cm2(0.028 dpa) was sufficient to eliminate superconductivity in the films.Jcat 76 K decreased from 25 000 A/cm2in the unirradiated sample to 2000 A/cm2after a fluence of 2.1×1013O/cm2. A room‐temperature anneal caused bothTcand the normal‐state resistivity to recover slightly after low‐fluence irradiations.
ISSN:0003-6951
DOI:10.1063/1.102431
出版商:AIP
年代:1989
数据来源: AIP
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34. |
Periodic morphological modification developed on the surface of polyethersulfone by XeCl excimer laser photoablation |
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Applied Physics Letters,
Volume 55,
Issue 5,
1989,
Page 510-512
Hiroyuki Niino,
Masashi Nakano,
Shozaburo Nagano,
Akira Yabe,
Tetsuro Miki,
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摘要:
Periodic and stable micropatterns appeared on the surface of amorphous polyethersulfone etched with an excimer laser at 308 nm in ambient air and a vacuum. The control of such radiative conditions as fluence and incident angle enables us to modify the spacing and pattern of the microstructures. A topographical investigation with scanning electron microscopy and an experiment with x‐ray photoelectron spectroscopy to determine its composition is reported.
ISSN:0003-6951
DOI:10.1063/1.101863
出版商:AIP
年代:1989
数据来源: AIP
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35. |
Comment on ‘‘Ion mixing of metal/Al bilayers near 77 K’’ [Appl. Phys. Lett.54, 413 (1989)] |
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Applied Physics Letters,
Volume 55,
Issue 5,
1989,
Page 513-514
M. A. Z. Vasconcellos,
J. A. T. Borges da Costa,
W. H. Schreiner,
I. J. R. Baumvol,
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摘要:
The correct mixing efficiency for the Fe/Al bilayer (900 keV Xe+3, 77K) is presented in the context of the recent analysis by Ma, IE.E., Work man, W.L>, Johnson, W.L., and Nicolet, M.A. (AIP)
ISSN:0003-6951
DOI:10.1063/1.101864
出版商:AIP
年代:1989
数据来源: AIP
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