摘要:

It is shown that for semiconductor memory devices utilizing charge storage in localized states it is possible to achieve a high degree of immunity to soft errors. This is accomplished by the application of an electric field which is strong enough to efficiently remove carriers produced by radiation from the region where charge is stored in localized states but not so strong as to remove readily by field ionization charge already stored in localized states. Tests of this concept have been performed using energetic Compton electrons produced by gamma rays.

ISSN:0003-6951    

DOI:10.1063/1.92894

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The oxidation properties of WSi2formed by laser reaction of electron beam evaporated tungsten on silicon substrates are reported. Both steam and dry oxidation processes are investigated in the temperature range 900–1000 °C. Measurements of oxide thickness versus time show similar behavior for both processes (linear changing to parabolic) with essentially no loss of W observed. Transmission electron microscopy investigation before and after oxidation indicates no decomposition of the films and grain sizes growing from 100 to ≳500 nm.

ISSN:0003-6951    

DOI:10.1063/1.92895

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Superconducting tunneling junctions have been prepared on Nb, Nb3Ge, V3Si, ErRh4B4, and Au base electrodes with either Pb or In counterelectrodes using a barrier of oxidized Er or Lu. Nb/RE/oxide/Pb Josephson junctions with very low leakage have been studied in detail. The ease of fabrication and the stability of the junctions under thermal cycling suggest that they may have technological significance.

ISSN:0003-6951    

DOI:10.1063/1.92896

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

An improved cooling rate has been achieved by liquid quenching on a hot substrate, which facilitates the preparation of amorphous and metastable crystalline states of refractory‐metal‐based alloys. The effectiveness has been proved by the experimental results for Mo‐Zr and Nb‐Si‐Ge alloys. A single amorphous phase was obtained from 40–60 at. % Zr. In the Nb‐Si‐Ge alloy system, amorphous and metastable A15 phases were obtained in a wide composition range. The superconducting properties and thermal stability of these phases have been studied.

ISSN:0003-6951    

DOI:10.1063/1.92897

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

It has been observed that in the external diffusion process for producing Nb3Sn‐Cu superconducting wire, dewetting of the Sn layer occurs for layer thicknesses on the order of 6 &mgr;m and larger. A mechanism for this dewetting is proposed and it is demonstrated that the problem may be eliminated by formation of an oxide skin on the outer surface of the Sn layer.

ISSN:0003-6951    

DOI:10.1063/1.92898

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The conventional preparation process of VO2temperature sensors requires the precise control of ambient atmosphere. This is one of the difficulties in their application to integrated devices. Laser sintering proved to be useful in overcoming this difficulty. Specimens of VO2film (1.4×1.4×0.04 mm3in size) printed on alumina substrates changed in electrical resistance by a factor of 102at about 68 °C with increasing temperature, after exposing them, in open air, to a 2‐ms pulse beam from a ruby laser on relaxation oscillation, whose energy density was 6.5 J/cm2.

ISSN:0003-6951    

DOI:10.1063/1.92899

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Conducting organic &pgr;‐donor halide complexes such as tetrathiafulvalene bromide were discovered to act as electron beam resists, which display a unique combination of useful properties. Exposure of sublimed films to an electron beam generates the neutral &pgr; donor and the halogen which is subsequently lost from the film. Depending on exposure conditions, either negative (solvent developed) or positive (in‐situdeveloped) resist images with a resolution of the order of 0.5 &mgr; can be generated. The strongly absorbing (UV,vis.) and highly conducting (∼10/&OHgr; cm) films were found to become transmitting and insulating upon electron beam irradiation.

ISSN:0003-6951    

DOI:10.1063/1.92901

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Transparent, stable, electrically insulating, crystalline thin films of two aromatic organic dianhydrides, 3,4,9,10‐perylenetetracarboxylic dianhydride C24H8O6and 1,4,5,8‐naphthalenetetracarboxylic dianhydride C14H4O6, were prepared by vapor deposition. On exposure to an electron beam dose of 0.05 C cm−2the written areas of the films appeared visually blackened and were electrically conducting. This chemical transformation was found to be both dose and current density dependent. Fine lines with widths of 1000 A˚ were prepared by electron exposure at just above writing threshold doses. The chemical and electrical properties of the materials formed upone‐beam treatment were found to be notably different from those of the starting anhydrides and useful for semiconductor device fabrication.

ISSN:0003-6951    

DOI:10.1063/1.92902

出版商:AIP    

年代:1982

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.93284

出版商:AIP    

年代:1982

数据来源: AIP