摘要:

It is shown that heat treatment in a hydrogen plasma of pure amorphous silicon films prepared by UHV evaporation yields a material with no observable dangling bond ESR signal. This material has electrical properties similar to films prepared by a glow‐discharge decomposition of silane but a lower hydrogen content as deduced from ir absorption data.

ISSN:0003-6951    

DOI:10.1063/1.90370

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Gettering in Si may be achieved by either phosphorus diffusion (ion pairing) or by dislocations (strain). We show here by use of backscattering spectrometry and transmission electron microscopy that, in particular, samples of both mechanisms are simultaneously operative. Au is present in a profile which mimics the phosphorus doping, and a spike of Au is superimposed on this profile in the strain field around a narrowly distributed misfit dislocation network. Both profiles are predominately (≳two‐thirds) substitutional, implying that local ion pair binding energies exceed the strain binding energy near the dislocations.

ISSN:0003-6951    

DOI:10.1063/1.90371

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A grain‐growth study of polycrystalline silicon having small dendritic crystallites obtained by cracking SiHCl3on a hot filament has been carried out in the temperature range 1275–1375 °C. It has been observed that (1) the grain growth in the polycrystalline silicon is due to a two‐dimensional motion of grain boundaries in a plane perpendicular to the grain axis, (2) the size‐limited grain‐growth law is obeyed, and (3) the activation energy of grain growth in polycrystalline silicon is 4.62±0.23 eV, which is nearly the same as the activation energy of the diffusion of Si31in silicon.

ISSN:0003-6951    

DOI:10.1063/1.90372

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Anodically oxidized layers were grown on GaP (111) surfaces from a solution of N‐methyl acetamide, H2O, NH4OH, and citric acid having apH value of 9.0. The layer growth rate was 11 A˚/V with a constant current density of 0.5 mA/cm2. Auger electron spectra and depth profiles of the components were measured. The phosphorousL3M2,3M2,3transition at 117 eV suffered a chemical shift in the oxide layers, and the shape of the first derivative of the Auger signal was completely different from that observed with P in GaP. Observation of the phosphorousKL2,3L2,3transition at 1858 eV indicated that the ratio of P/Ga had a constant value throughout the oxide layers. Only the oxygen concentrations varied along with the depth.

ISSN:0003-6951    

DOI:10.1063/1.90373

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

It was found that the liquidus composition determined by the saturation technique for the (100) ‐oriented InP source crystal is different from that for the (111)B‐oriented InP source crystal in the LPE growth of GaInAsP alloys. The lattice‐matching conditions in GaInAsP LPE growth using the liquidus data are also influenced by the substrate orientation.

ISSN:0003-6951    

DOI:10.1063/1.90374

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Experiments to determine generation lifetime and capture cross section of gold inn‐type silicon were performed using the non‐steady‐state linear voltage ramp technique. Measurements were carried out on MOS devices with different gold concentrations, obtained by various diffusion times of 10, 20, 40, and 100 min at 900 °C. It is found that in the temperature range 235–265 °K, the capture cross section is temperature dependent and has a value of the order of 1.0×10−15cm2.

ISSN:0003-6951    

DOI:10.1063/1.90375

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Observations on laser‐irradiated GaAs are reported in which the phenomenon of induced surface periodicity is related to a nonlinear interaction between simultaneously oscillating axial modes of the laser. It is suggested that during surface melting and regrowth material is distributed along nodal lines of a standing acoustic wave pattern corresponding to the axial mode beat frequencies. The several patterns observed are not consistent with an interference effect at optical frequencies.

ISSN:0003-6951    

DOI:10.1063/1.90376

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Experimentally observed laser‐induced redistributions of ion‐implanted dopants in silicon are explained theoretically in terms of diffusion in the molten state. Calculations of thermal and mass diffusion in silicon show that the redistribution of a dopant file after pulsed‐laser annealing is dependent on the time the dopant region remains molten and on the value of the mass‐diffusion coefficient for the particular dopant.

ISSN:0003-6951    

DOI:10.1063/1.90377

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The effect of surface condition on the out‐diffusion of atoms through a thin film to the free surface has been analyzed by considering the coupling between grain boundary diffusion and surface diffusion. It is demonstrated that under certain circumstances, the surface diffusion rate can have a large effect on the measured rate of diffusion through the thin film. In the analysis for the cases involving out‐diffusion, the surface is treated as a sink of finite capacity and the saturation level of material accumulation at the surface is discussed in terms of a surface‐segregation ratio. This analysis can qualitatively explain some of the recent experimental observations on the effect of the annealing ambient on out‐diffusion. The opposite but similar problem of the effect of the source surface condition on the rate of in‐diffusion from the surface has also been discussed.

ISSN:0003-6951    

DOI:10.1063/1.90378

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We report a Raman study of the lattice vibrations of the quaternary compound In1−xGaxAsyP1−yover the whole range of compositions lattice‐matched to InP. The major bands in the spectra show apseudo‐two‐modebehavior involving the optical phonons of InGaAs and InP. A low‐frequency structure is attributed to disorder‐induced scattering by acoustical vibrations. Weaker bands are assigned to Ga‐P and In‐As pair vibrations.

ISSN:0003-6951    

DOI:10.1063/1.90379

出版商:AIP    

年代:1978

数据来源: AIP