摘要:

A resonator configuration is described which makes it possible to obtain simultaneous laser oscillation on several preselected transitions without the coupling effect. This resonator is used in a multifrequency injection‐locking system in which the energy of an atmospheric TEA CO2laser is extracted in several preselected transitions.

ISSN:0003-6951    

DOI:10.1063/1.89152

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Bi12SiO20and Bi12GeO20present the best known photorefractive sensitivity for read‐write volume holographic storage (S−1≃300 &mgr;J/cm2) combined with high‐quality image reconstruction. Recording processes by photocarrier diffusion (no applied field) and by photocarrier drift are identified. The high photosensitivity is attributed to photocarrier displacements comparable to or larger than fringe spacings. Saturation diffraction efficiency at light power densities larger than 600&mgr;W/cm2at &lgr;=514.5 nm occurs from complete photocarrier trap filling.

ISSN:0003-6951    

DOI:10.1063/1.89153

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Simultaneous end light emission measurements of the first‐ and second‐overtone bands of CO have been obtained in a flowing CO‐N2‐He laser plasma. Interpretation of the band structure usingAcoefficients from Young and Eachus show consistent agreement with observation up tov=26. This agreement supports the use of theseAcoefficients in laser and kinetic applications.

ISSN:0003-6951    

DOI:10.1063/1.89154

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Metal structures 100 A˚ high with sharply defined linewidths of 80 A˚ have been produced using an electron‐beam fabrication process. A contamination resist pattern is written with a 5‐A˚ 45‐keV scanning electron beam in a 100‐A˚‐thick Au‐Pd film supported by a 100‐A˚ carbon foil. The unprotected Au‐Pd is removed by dc ion etching with 1‐keV Ar ions. Unlike most electron‐beam microfabrication processes, the resolution of the resulting structure is not limited by electron scattering, but by the grain size of the metal films. These structures should have direct application in a large number of device fabrication problems in electron and x‐ray beam technology and they should provide masks for other microfabrication processes such as x‐ray lithography.

ISSN:0003-6951    

DOI:10.1063/1.89155

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Solid‐phase epitaxial growth (SPEG) of silicon was investigated by a tracer technique using radioactive31Si formed by neutron activation in a nuclear reactor. After depositing Pd and Si onto activated single‐crystal silicon substrates, Pd2Si was formed with about equal amounts of radioactive and nonradioactive Si during heating at 400 °C for 5 min. After an 1‐sec annealing stage (450→500 °C in 1 h) this silicide layer, which moves to the top of the sample during SPEG, is etched off with aqua regia. From the absence of radioactive31Si in the etch, it is concluded that SPEG takes place by a dissociation mechanism rather than by diffusion.

ISSN:0003-6951    

DOI:10.1063/1.89156

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Silicon films were grown from Al‐Si eutectic melt directly formed on aluminum sheets. High‐energy silicon atoms were deposited onto aluminum sheets at 420 °C in an argon discharge atmosphere of 5×10−4Torr using an rf ion‐plating system. A significant increase in the crystallinity of silicon films was observed from transmission electron diffraction studies. The mechanism of silicon eutectic growth on aluminum sheets is also discussed.

ISSN:0003-6951    

DOI:10.1063/1.89157

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Metal–amorphous‐silicon Schottky barriers, similar to those used in thin‐film amorphous‐silicon solar cells, exhibit nearly ideal diode behavior in the dark. The current‐voltage characteristics have been studied in the range from 270 to 370 °K and are found to be in agreement with the diffusion theory of metal‐semiconductor rectification. Barrier heights, which were measured by two different methods, depend on the metal work function, and barriers as high as ∼1.1 eV are obtained with Pt films.

ISSN:0003-6951    

DOI:10.1063/1.89158

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

We have observed and analyzed a very rapid form of degradation caused by the optical excitation of GaAs/GaAlAs DH laser material. It consists of the very rapid (50 &mgr;/sec) development of ⟨110⟩‐oriented lines originating at a mechanically damaged area and restricted to the optically excited area. TEM analysis shows that the degraded region consists of an orthogonal array of misfit dislocations of 60° type at the interface between thep‐ternary layer and the active region. It seems likely that the dislocations are generated byglideas a result of the lattice misfit stress between GaAs and GaAlAs and that their energy of motion is supplied through nonradiative recombination events.

ISSN:0003-6951    

DOI:10.1063/1.89159

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

A careful analysis ofI‐Vcurves under illumination makes it possible to characterize the different parameters leading to an increase of the open‐circuit voltageVocof MIS silicon solar cells with respect to classical Schottky barrier solar cells. The separate influence of the effective barrier height and of the quality factor of the diode uponVocis emphasized. An over‐all conversion efficiency over 8% under AM1 illumination is reported for a large‐area (2.5 cm2) MIS cell.

ISSN:0003-6951    

DOI:10.1063/1.89160

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

The metal–thin‐insulator–semiconductor structure recently has been shown to have potential as a simple efficient solar cell. A general theory of these solar cells as well as experimental results for silicon devices optimized on the basis of this theory are described. The experimental devices have exceptionally good open‐circuit voltages. Under illumination resulting in a short‐circuit current density of 32 mA/cm2, an open‐circuit voltage of 618 mV and a fill factor of 0.6 were obtained.

ISSN:0003-6951    

DOI:10.1063/1.89161

出版商:AIP    

年代:1976

数据来源: AIP