摘要:

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500–700 °C using a HBO2source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary‐ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550–700 °C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron‐doped layers have been grown at 600 °C without detectable oxygen incorporation.

ISSN:0003-6951    

DOI:10.1063/1.101763

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

(Bi‐Sr‐O)/(Ca‐Cu‐O) multilayered films were prepared by a plasma‐controlled sputtering method and annealed under various conditions to induce the superconductivity in the films. The annealing in the presence of PbO vapor at 860 °C was effective to convert the unleaded insulating multilayered films to superconductors with onset and zero‐resistivity temperatures of 113 and 103 K, respectively. Auger electron spectroscopy verified the incorporation of Pb in the films.

ISSN:0003-6951    

DOI:10.1063/1.102442

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

A molecular beam study of the Cl2+GaAs(s) reaction has been performed for surface temperatures in the range of 300–550 K. The gas phase neutral reaction products are identified by mass spectroscopy using electron bombardment ionization. Detailed analysis of the surface temperature dependence of the mass spectrum of the observed reaction products indicates that only three neutral reaction products are formed in this temperature range: GaCl3, AsCl3, and As4. At low (high) surface temperatures, only AsCl3(As4) is observed. The ratio of the etching rates of Ga and As is independent of the surface temperature and within the range expected for stoichiometric etching. The change in the mode of As removal with surface temperature for the incident Cl2flux implies that surface diffusion is important at surface temperatures above 400 K.

ISSN:0003-6951    

DOI:10.1063/1.101764

出版商:AIP    

年代:1989

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.101765

出版商:AIP    

年代:1989

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.101766

出版商:AIP    

年代:1989

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.102378

出版商:AIP    

年代:1989

数据来源: AIP