摘要:

Enhanced diffusion of arsenic along grain boundaries and subboundaries in zone‐recrystallized silicon‐on‐insulator films has been measured by electron‐beam‐induced current analysis of lateralpnjunctions fabricated in the films. A four‐hour diffusion at 1100 °C resulted in protrusions of arsenic at the junction edges which measured approximately 3–5 &mgr;m along the grain boundaries and only 1–2 &mgr;m along the subboundaries. The results suggest that under more ordinary thermal processing conditions, field‐effect transistors with channel lengths greater than about 1.5 &mgr;m can be randomly positioned with respect to the more numerous subboundaries, but grain boundaries should be avoided.

ISSN:0003-6951    

DOI:10.1063/1.94359

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The deformation‐potential theory of Bir and Pikus, for the hole‐optical phonon scattering, has been extended for the treatment of nonparabolic bands and combined with the theory of Tiersten, for the hole‐acoustic phonon scattering, to calculate phonon‐limited mobilities in  p‐type silicon. The mobilities were calculated without the relaxation‐time approximation from solutions of the full Boltzmann equation, with accurate hole wave functions and valence‐band dispersions. Only the hole‐optical phonon deformation‐potential parameter was adjusted to yield agreement with transport data at room temperature; other experimental input was fixed. This represents the first such calculation for silicon. The conductivity and Hall mobilities, and the Hall factor, are in very good agreement with most of the available experimental data. The agreement between experiment and theory is significantly better than that attained by earlier calculations.

ISSN:0003-6951    

DOI:10.1063/1.94360

出版商:AIP    

年代:1983

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.94361

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A new liquid phase epitaxy (LPE) method, which can control impurity concentration by volatilization of impurities from the growth solution under reduced pressure, has been developed. Using this LPE method, high‐efficiency GaP pure green light‐emitting diodes, of which the peak wavelength is 555 nm, has been obtained. The average efficiency for a epoxy‐encapsulated diode is 0.1% and the maximum efficiency is 0.14% at 16 A/cm2.

ISSN:0003-6951    

DOI:10.1063/1.94362

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over the entire range ofx. Electrical and optical properties of the layers were measured. Electrical compensation by Be+and N+implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.

ISSN:0003-6951    

DOI:10.1063/1.94363

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

During sealed ampoule annealing ofn‐type (S,Se,Sn) InP crystals at 550 °C, an unexpected diffusion front was observed whose apparent diffusivity exceeded that of the rapidly diffusing Zn impurity by about two orders of magnitude. Using luminescence techniques, this diffusion front was correlated with changes in the ionized impurity level. In this letter, we show that for annealed InP:S (2×1018cm−3) crystals the donor profile obtained from cathodoluminescence (CL) intensity measurements corresponds to the34S profile obtained by secondary ion mass spectroscopy. Although dislocations are generally paths along which impurities can rapidly migrate, CL imaging shows that dislocations impede rather than enhance sulfur out diffusion. Further study is required to determine the rapid out‐diffusion mechanism.

ISSN:0003-6951    

DOI:10.1063/1.94364

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Spin dependent trapping of majority carriers at trivalent silicon centers in the grain boundaries of a polycrystalline silicon integrated circuit resistor has been observed. The phenomenon has been studied both in a silicon bicrystal and in thin‐film polycrystalline silicon with essentially identical results. This not only identifies the trapping center responsible for the large barriers observed at silicon grain boundaries, but also demonstrates that the technique has the sensitivity required to work with actual microelectronic devices.

ISSN:0003-6951    

DOI:10.1063/1.94365

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

High‐quality, nominally undoped, low‐resistivity ZnSe thin films are grown by molecular beam epitaxy (MBE). The MBE ZnSe shows the largest peak intensity ratio of the near‐band‐edge emission to the deep center luminescence even at room temperature compared with other epitaxial techniques, which indicates the smallest concentration of complex defects in the MBE ZnSe. From the temperature dependence of electron mobility for MBE ZnSe, we obtained the mobility value as high as 6.9×103cm2/Vs. This is the highest value ever obtained in epitaxial ZnSe films and indicates the concentration of isolated charged defects as low as 1×1016cm−3.

ISSN:0003-6951    

DOI:10.1063/1.94366

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Ion beam etching produces a modified layer at the surface of silicon which subsequently affects the electrical characteristics of devices fabricated on these surfaces. In this investigation it is shown that the modified layer resulting from low‐energy ion beam processing contains a fundamental defect which has the signature of a trivalently bonded, silicon defect center. The evolution of the signature of this defect with ion beam energy and anneal history correlates with the evolution of the current‐voltage characteristics of metal contacts made to the modified layer.

ISSN:0003-6951    

DOI:10.1063/1.94367

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The use of a 100‐kW water‐walled dc argon lamp to anneal ion‐implanted GaAs is reported. Annealing cycles of 3 and 10 s and peak temperatures from 950 to 1200 °C have been used to anneal Be, Si, and Zn implanted following representative implant schedules of technological importance. It is demonstrated that this technique is superior to conventional furnace anneal techniques in terms of the doping profiles, peak carrier concentrations, activation efficiencies (particularly at high doses), and mobilities achieved. The annealing technique should be applicable to large volume GaAs integrated circuit production and 100‐mm‐diam wafers can be annealed in a single exposure with better than 2% temperature uniformity (Si data).

ISSN:0003-6951    

DOI:10.1063/1.94368

出版商:AIP    

年代:1983

数据来源: AIP