摘要:

The first observation of minority‐carrier injection annealing of radiation‐induced defects in InP is reported. Minority‐carrier injection due to both forward bias application and light illumination at room temperature after electron irradiation is shown to enhance defect annealing inp‐InP and to result in the recovery of InP solar cell properties. These results suggest that most InP‐based devices under minority‐carrier injection mode operation conditions are more radiation resistant than any other material‐based devices.

ISSN:0003-6951    

DOI:10.1063/1.94756

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

In general, single GaAs quantum wells surrounded by AlxGa1−xAs cladding layers show only weak photoluminescence corresponding to exciton recombination. This is attributed to the poor quality of the AlGaAs in the lower cladding layer resulting in a degraded interface and poor GaAs in the quantum well. The situation gets worse when the thickness of the bottom AlGaAs layer is increased, the GaAs thickness is reduced, or the Al mole fraction is increased. Using a graded three‐period superlattice ahead of the quantum well causes the intensity of the photoluminescence associated with exciton recombination to increase to more than 160 times that associated with the conventional structure. This exciton recombination peak is due to either very shallow bound or free‐electron recombination and has a full width at half‐maximum of only 2 meV.

ISSN:0003-6951    

DOI:10.1063/1.94757

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Ion implantation doping of Be acceptors inn‐In0.53Ga0.47As is reported. A significant improvement in peak concentration, depth control, and solubility is achieved with rapid (30 s) thermal anneals compared to conventional 15‐min furnace anneals, resulting inp‐njunction depths less than 1 &mgr;m with peak acceptor concentrations greater than 1018cm−3. Electrical profiles andp‐njunction characteristics are presented.

ISSN:0003-6951    

DOI:10.1063/1.94758

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We show that the ‘‘new’’ photoluminescence line in silicon at 1.1223 eV which was recently reported and ascribed to a nitrogen complex is identical with theAline of the isoelectronicA,B,Cexciton system as previously studied. New data are presented which confirm that nitrogen is incorporated in the optical center. Further defect constituents cannot be identified on the basis of the present data.

ISSN:0003-6951    

DOI:10.1063/1.94759

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A novel anodic sulfidization process for forming native sulfide films on Hg1−xCdxTe is described. In the new process native sulfide films rather than native oxides terminate the lattice and passivate the surface. The results of Auger electron spectroscopy analysis indicate that native homogeneous CdS films are formed with an abrupt interfacial transition. The measured capacitance‐voltage characteristics of metal‐insulator‐semiconductor devices indicate that the films have a low negative fixed surface charge density of the order of –1×1011e cm−2and a relatively low concentration of fast surface charge density. The native sulfide films leave the surface ofp‐type Hg1−xCdxTe practically at flat band and in this respect are superior to native oxide films which invert the surface ofp‐type material. The new surface passivation is in particular suitable for photovoltaic diodes implemented onp‐type Hg1−xCdxTe.

ISSN:0003-6951    

DOI:10.1063/1.94760

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Epitaxial silicon films have been grown on gallium phosphide by molecular beam and solid phase epitaxy or combinations of both methods. During molecular beam epitaxial growth Ga segregates on top of the Si films, which can be considerably reduced by solid phase epitaxy but not completely suppressed. The cause of segregation is investigated using Rutherford backscattering, defect etching, and scanning electron microscopic inspection. We conclude that imperfections in the epitaxial layer act as diffusion pipes for atoms.

ISSN:0003-6951    

DOI:10.1063/1.94761

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Low‐temperature quenching of inhomogeneities in two‐dimensional infrared images of large diameter liquid encapsulated Czochralski (LEC) crystals of semi‐insulating GaAs is reported. The temperature and wavelength dependence of the ‘‘fatiguing’’ phenomena have the same characteristics as those reported for the deep donor EL2. These results demonstrate in a clear way that the dominant nonuniformities of the infrared (0.7–1.4 eV) transmission of LEC GaAs are due to fluctuations in the concentration of neutral EL2. In the quenched state, weak nonuniformities with reverse contrast to EL2 still remain. These may be due to a photoelastic effect in the strain fields of dislocations, or to the presence of another center whose spatial fluctuations are the reverse of those of EL2.

ISSN:0003-6951    

DOI:10.1063/1.94762

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Amorphous silicon Schottky barrier photodetectors with internal quantum efficiencies of 36% and sampling oscilloscope limited response times of 40 ps (full width at half‐maximum) have been fabricated. Utilizing ultrathin films of rf glow discharge deposited hydrogenated amorphous silicon, carrier sweep‐out was achieved in a new microstrip transmission line structure. The performance of these devices, for picosecond pulse detection, is now comparable to that of crystalline semiconductor detectors.

ISSN:0003-6951    

DOI:10.1063/1.94763

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The drift in channel current of SiO2/InP metal‐insulator‐semiconductor field‐effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In2O3within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO2/InP interface.

ISSN:0003-6951    

DOI:10.1063/1.94764

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Reflection high‐energy electron diffraction (RHEED) is used to determine the local misorientation of vicinal, molecular beam epitaxy prepared GaAs surfaces. With the glancing angle of incidence fixed, the intensity along the (00) streak is measured for different crystal azimuths. The specular beam is observed to split by an amount that depends upon the scattering geometry and surface misorientation. The method is applied to surfaces misoriented with respect to low‐index bulk planes by an average polar angle of 2°, 1°, and 5 mrad. Local polar and azimuthal misorientations were determined to within 5% and 10°, respectively. The measurement shows that an important mechanism responsible for RHEED streaks is diffraction from ordered staircase steps.

ISSN:0003-6951    

DOI:10.1063/1.94765

出版商:AIP    

年代:1984

数据来源: AIP