| 31. |
Enhanced electron spin polarization in photoemission from thin GaAs |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1686-1688
T. Maruyama,
R. Prepost,
E. L. Garwin,
C. K. Sinclair,
B. Dunham,
S. Kalem,
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摘要:
The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2‐&mgr;m‐thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9‐&mgr;m‐thick GaAs sample.
ISSN:0003-6951
DOI:10.1063/1.102236
出版商:AIP
年代:1989
数据来源: AIP
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| 32. |
Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett.53, 495 (1988)] |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1689-1689
Michio Sato,
Yoshiji Horikoshi,
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PDF (147KB)
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ISSN:0003-6951
DOI:10.1063/1.102211
出版商:AIP
年代:1989
数据来源: AIP
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| 33. |
Response to ‘‘Comment on ‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’ ’’ [Appl. Phys. Lett.55, 1689 (1989)] |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1690-1690
K. Taira,
H. Kawai,
I. Hase,
K. Kaneko,
N. Watanabe,
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PDF (95KB)
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ISSN:0003-6951
DOI:10.1063/1.102193
出版商:AIP
年代:1989
数据来源: AIP
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