摘要:

The {D,H}+complex in silicon, with D=P or As, is studied near theabinitioHartree–Fock level. The results show that the transitions between {D,H}0and {D,H}+involve a drastic change in the equilibrium geometry and electronic structure of the complex. The implications of these results on the observed dependence of the debonding rates on majority‐ and minority‐carrier concentrations for both As and P donors are discussed.

ISSN:0003-6951    

DOI:10.1063/1.106196

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We demonstrate that the electronic structure of (InAs)1−x(GaSb)x‐AlSb superlattices can be engineered so that the application of an external electric fieldincreasesthe superlattice gap. We find that such a blue Stark shift can only be achieved in thin layer superlattices.

ISSN:0003-6951    

DOI:10.1063/1.106197

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The ohmic contact formation mechanism in pulsed laser beam mixed Au/Te/Au/GaAs structures has been investigated by129I Mo¨ssbauer spectroscopy. Low‐resistance, ohmic contact structures, on bothn‐ andp‐type GaAs, were found to be correlated to the formation of a high density of defect complexes consisting of tellurium atoms quasi‐substitutional on arsenic sites with a gallium vacancy in the first neighbor shell. Correspondingly, the ohmic conduction is suggested to occur according to the amorphous heterojunction model, i.e., by a multi‐step recombination‐tunneling process.

ISSN:0003-6951    

DOI:10.1063/1.106198

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The growth by pulsed‐laser deposition ofc‐axis‐oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]‐oriented Si with epitaxial yttria‐stabilized ZrO2as a buffer layer is reported. X‐ray‐diffraction studies of the heterostructures show that all the layers grow in thec‐axis orientation, with a rocking angle of 1.0°–1.2° for the bismuth titanate layer and 0.6°–0.8° for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross‐sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45° to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180–200.

ISSN:0003-6951    

DOI:10.1063/1.106199

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We have prepared high‐qualityc‐axis oriented superconducting YBa2Cu3O7−&dgr;thin films on Si (100) substrates with CoSi2buffer layers byinsitupulsed laser ablation processing. The films were characterized by x‐ray diffraction, four‐point ac electrical resistivity, scanning electron microscopy (SEM), and transmission electron microscopy (TEM) techniques. YBa2Cu3O7−&dgr;films were found to be textured withcaxis perpendicular to the substrate. A plot of normalized resistance against temperature exhibited a metallic behavior followed by an onset superconducting transition at 91 K with zero resistance temperature (Tc0) of 83 K. Cross‐sectioned TEM results showed quite smooth interface between CoSi2and Si with little interdiffusion; however, a reacted zone was observed between CoSi2and YBa2Cu3O7−&dgr;layers.

ISSN:0003-6951    

DOI:10.1063/1.106200

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The experimental results of magnetostatic soliton propagation at microwave frequencies are compared with a numerical nonlinear model. Despite the conclusions of the experimental results, it is shown that the output power behavior as a function of the input power represents the main signature of the soliton existence in the magnetic films.

ISSN:0003-6951    

DOI:10.1063/1.106201

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Amorphous WO3thin films have been deposited in a plasma‐enhanced chemical vapor deposition system, and were patterned with a 193‐nm excimer laser (one pulse, 10–25 mJ/cm2). Negative‐tone, sub‐0.5‐&mgr;m lines and spaces were obtained following dry development in a low‐power CF4plasma. The mechanism for laser‐induced etch selectivity was studied with angle‐resolved x‐ray photoelectron spectroscopy. It was inferred from the fluorine photoelectron spectra that the laser induces atomic rearrangements that impede the etch process initiated by fluorine‐containing radicals. A possible interpretation is that the rearrangements, which may be partially thermally activated, reduce the volume of the microvoids present in WO3.

ISSN:0003-6951    

DOI:10.1063/1.106202

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The reaction between hydrogen atoms and an ultrathin aluminum film (2 monolayer) on a Mo(111) substrate was studied by thermal desorption (TD) and Auger electron spectroscopy (AES). Through TD experiments for the hydrogen precovered aluminum films, desorption of aluminum hydride was observed at 370 K. It was confirmed that 1/3 monolayer of aluminum was desorbed as aluminum hydrides after a TD experiment for the aluminum film on which hydrogen was preadsorbed to a full monolayer coverage. The aluminum film was continuously etched at 410 K by a steady flow of hydrogen atoms. These results indicate the potential capability of hydrogen atoms as a selective etchant for aluminum.

ISSN:0003-6951    

DOI:10.1063/1.106203

出版商:AIP    

年代:1991

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.106205

出版商:AIP    

年代:1991

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.106368

出版商:AIP    

年代:1991

数据来源: AIP