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| 41. |
Beam energy effects in electron beam lithography: The range and intensity of backscattered exposure |
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Applied Physics Letters,
Volume 45,
Issue 6,
1984,
Page 698-700
L. D. Jackel,
R. E. Howard,
P. M. Mankiewich,
H. G. Craighead,
R. W. Epworth,
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摘要:
The range and intensity of backscattered exposure from a silicon substrate were measured as a function of incident electron energy. The range is proportional to the energy to the 1.7 power. The integrated energy deposited at the silicon surface by backscattered electrons is about 0.8 of the energy deposited by the incident electrons and is nearly independent of the incident beam electron energy. These results show that the severity of the proximity effect, the exposure of regions not addressed by the beam, can be reduced by using high beam energy since the backscattered electrons are spread over a distance much larger than minimum feature sizes.
ISSN:0003-6951
DOI:10.1063/1.95361
出版商:AIP
年代:1984
数据来源: AIP
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| 42. |
Interferometric high pressure gauge for the diamond anvil cell useful at high temperatures |
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Applied Physics Letters,
Volume 45,
Issue 6,
1984,
Page 700-702
J. A. H. da Jornada,
S. Block,
G. J. Piermarini,
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PDF (217KB)
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摘要:
A new method of precise pressure measurement in the diamond anvil cell, especially useful at high temperatures, is presented. It is based on the measurement of the channeled spectrum of a miniature Fabry–Perot etalon interferometer placed inside the cell. The validity of the method has been verified with an interferometric gauge of ZnWO4.
ISSN:0003-6951
DOI:10.1063/1.95362
出版商:AIP
年代:1984
数据来源: AIP
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