41. |
ZnSe nitrogen doping using an ion-free electron-cyclotron-resonance plasma beam |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1453-1455
Hironori Tsukamoto,
Masaharu Nagai,
Eisaku Katoh,
Kohshi Tamamura,
Akira Ishibashi,
Masao Ikeda,
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摘要:
Nitrogen doping in ZnSe using a new type of electron-cyclotron-resonance (ECR) source has been investigated. Selective nitrogen radical doping is performed using the ECR source with an external electrode, which can remove charged particles in the nitrogen plasma by the electrode applied electric field. Nitrogen ions are trapped by the electrode and the ion current is measured as a function of the electric field. The activation ratio of nitrogen atoms is investigated for various doping conditions by comparing the carrier profile and the atomic nitrogen profile, which are measured by capacitance–voltage techniques and secondary ion mass spectrometry. It was confirmed that nitrogen ions are removed and do not play a role asp-type dopants in ZnSe growth by molecular beam epitaxy. The activation ratio of nitrogen atoms is increased by removing the nitrogen ions. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118644
出版商:AIP
年代:1997
数据来源: AIP
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42. |
Study of composition and critical-point broadening inInAs/Ga1−xInxSb superlattices using spectroscopic ellipsometry |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1456-1458
J. Wagner,
J. Schmitz,
N. Herres,
G. Tra¨nkle,
P. Koidl,
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摘要:
InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy were studied by spectroscopic ellipsometry. The pseudodielectric function of InAs/GaSb SLs could be fitted using modified bulk dielectric functions of InAs and GaSb with pronounced energy shifts and broadening of critical-point resonances. These changes in the dielectric functions of the constituent layers can be explained only in part by pseudomorphic strains, therefore providing evidence for thin-layer critical-point broadening and quantum confinement effects. For InAs/(GaIn)Sb SLs, the extremum in the pseudodielectric function derived from theE1critical point of (GaIn)Sb was found to shift to lower energies with increasing In content, and thus can be used as a probe for the composition of the (GaIn)Sb SL layers. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118560
出版商:AIP
年代:1997
数据来源: AIP
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43. |
Polarization anisotropy in the electroabsorption of ordered GaInP |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1459-1461
E. Greger,
K. H. Gulden,
M. Moser,
G. Schmiedel,
P. Kiesel,
G. H. Do¨hler,
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摘要:
The polarization dependence of the Franz–Keldysh effect (FKE) in metalorganic vapor phase epitaxially grown AlGaInP/GaInP/AlGaInPp-i-ndouble heterostructures was investigated for samples with different ordering parameters. We determine an ordering induced shift of the FK spectra of up to 13 meV between light polarized along the [011] and [01-1] crystal directions. Due to the FKE the transmitted light intensity ratio between the respective polarizations was changed from 0.2 to 2.8 dB by applying an electric field of 335 kV/cm. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118561
出版商:AIP
年代:1997
数据来源: AIP
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44. |
Dramatic effect of postoxidation annealing on (100)Si/SiO2roughness |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1462-1464
Xidong Chen,
J. M. Gibson,
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摘要:
We use a plan-view transmission electron microscope technique to unambiguously image the “physical” interface position between Si and furnace grownSiO2layers. As-grown ∼6-nm-thick (100) oxides have a very high roughness (&sgr;∼10–15 Å), which can be removed by short annealing in an inert gas at a growth temperature of 900 °C. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118562
出版商:AIP
年代:1997
数据来源: AIP
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45. |
Thermoluminescence of ZnS nanoparticles |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1465-1467
Wei Chen,
Zhanguo Wang,
Zhaojun Lin,
Lanying Lin,
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摘要:
The thermoluminescence (TL) of ZnS nanoparticles is reported. The TL intensity increases as the particle size is decreased. The consistency of the size dependence of the TL with that of the surface fluorescence indicates that the TL may be related to the surface states. TL may be caused by the recombination of carriers released from the surface states or defect sites by heating. Smaller particles have higher surface/volume ratio and more surface states, therefore contain more accessible carriers for TL. Besides, the carrier recombination rate increases upon decreasing size due to the increase of the overlap between the electron and hole wave functions. These two effects may make the TL increase upon decreasing size of the particles. The appearance of TL prior to any radiation reveals that trapped carriers have pre-existed. The investigation of TL may provide some useful information about the surface states that may explain the size dependence of the surface fluorescence. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118563
出版商:AIP
年代:1997
数据来源: AIP
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46. |
Surface acoustic wave measurements ofYBa2Cu3O7−&dgr;thin films and single crystals |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1468-1470
R. Gaffney,
C. Hucho,
J. R. Feller,
M. J. McKenna,
B. K. Sarma,
M. Levy,
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摘要:
Surface acoustic wave (SAW) velocity and attenuation measurements have been performed on high-temperature superconductingYBa2Cu3O7−&dgr;(YBCO) thin films (deposited on nonpiezoelectric substrates), and YBCO single crystals. A “bridge” technique is employed in which piezoelectric substrates, patterned with interdigital transducers, are bonded to the sample under investigation. The temperature dependence of 168 MHz SAW attenuation in a single crystal near its superconducting transition has been measured in applied magnetic fields up to 1.6 T. Features are seen above the superconducting transition temperature which may be indicative of a transition in the electric polarization of the material. A field-dependent attenuation peak, seen in the superconducting state, is discussed in terms of the theory of thermally activated vortex motion. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118564
出版商:AIP
年代:1997
数据来源: AIP
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47. |
Formation of phase intergrowth in the syntheses of Bi-superconducting thin films |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1471-1473
Hiroyuki Ota,
Kazuo Sakai,
Zon Mori,
Ryozo Aoki,
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摘要:
Phase intergrowth among some kinds of the Bi2Sr2Can−1CunOyphases is observed in the thin film fabrication at ultralow co-deposition with multitargets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118565
出版商:AIP
年代:1997
数据来源: AIP
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48. |
LargeJcenhancement by ion irradiation for thickYBa2Cu3O7−&dgr;films prepared by photoassisted metalorganic chemical vapor deposition |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1474-1476
A. Ignatiev,
Q. Zhong,
P. C. Chou,
X. Zhang,
J. R. Liu,
W. K. Chu,
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摘要:
Thick superconducting films ofYBa2Cu3O7−&dgr;grown by photoassisted metalorganic chemical vapor deposition that have shown a decrease ofJcwith increasing thickness (>1 &mgr;m) have been exposed to ion irradiation in an attempt to enhanceJc.A 4.5 &mgr;m thick film irradiated with 1 MeV protons at a dose of3×1014/cm2has shown an increase ofJcby a factor of nearly20–1.7×106 A/cm2corroborating the proposal that a lack of pinning centers in the grown thick films, due to their high crystalline quality, contributed to the observed decrease ofJcwith increasing film thickness. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118566
出版商:AIP
年代:1997
数据来源: AIP
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49. |
Large positive magnetoresistance in Cr/Ag/Cr trilayers |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1477-1479
G. Verbanck,
K. Temst,
K. Mae,
R. Schad,
M. J. Van Bael,
V. V. Moshchalkov,
Y. Bruynseraede,
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摘要:
Large positive magnetoresistance (LPMR) effects have been measured at temperaturesT<100K in epitaxial Cr/Ag/Cr trilayers grown by molecular beam epitaxy. Compared to single Ag films, the magnetoresistance at 4.2 K is enhanced by nearly two orders of magnitude reaching values up to 120&percent; in a field of 8 Tesla. This behavior is related to a drastic modification of the electron scattering at the Ag interfaces due to the presence of the buffer and cap Cr layers. The LPMR curves measured at different temperatures demonstrate a scaling behavior typical for electron transport in two-dimensional systems. The magnitude of the LPMR is a function of temperature and residual resistance ratio and is influenced by the direction of the applied magnetic field. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118567
出版商:AIP
年代:1997
数据来源: AIP
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50. |
High power electrochemical capacitors based on carbon nanotube electrodes |
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Applied Physics Letters,
Volume 70,
Issue 11,
1997,
Page 1480-1482
Chunming Niu,
Enid K. Sichel,
Robert Hoch,
David Moy,
Howard Tennent,
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摘要:
Carbon nanotube sheet electrodes have been prepared from catalytically grown carbon nanotubes of high purity and narrow diameter distribution, centered around 80 Å. Our study shows that the electrodes are free-standing mats of entangled nanotubes with an open porous structure almost impossible to obtain with activated carbon or carbon fiber. These properties are highly desirable for high power and long cycle life electrochemical capacitors. Specific capacitances of 102 and 49 F/g were measured at 1 and 100 Hz, respectively, on a single cell device with 38 wt &percent;H2SO4as the electrolyte. The same cell had a power density of>8000W/kg. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118568
出版商:AIP
年代:1997
数据来源: AIP
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