摘要:

FerroelectricSr0.8Bi2.5Ta1.2Nb0.9O9+xthin films on aPt/SiO2/Sisubstrate were prepared by using two-target off-axis radio frequency magnetron sputtering, and their structural and electrical properties were investigated. The films crystallized with high (115) diffraction intensity at a substrate temperature of 600 °C, and showed columnar microstructure. The 600 °C sputtered films with a thickness of 440 nm exhibited remanent polarization(2Pr)of52 &mgr;C/cm2and coercive field(2Ec)28 kV/cm at an applied voltage of 1.5 V. The leakage current density was about6×10−6 A/cm2at an electric field of 50 kV/cm. The films demonstrated fatigue free characteristics up to1.0×1010switching cycles under a 3 V bipolar 1 MHz square wave. ©1998 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.120571

出版商:AIP    

年代:1998

数据来源: AIP