41. |
Electrical characteristics of plasma oxidizedSi1−x−yGexCymetal–oxide–semiconductor capacitors |
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Applied Physics Letters,
Volume 72,
Issue 10,
1998,
Page 1250-1252
S. K. Ray,
L. K. Bera,
C. K. Maiti,
S. John,
S. K. Banerjee,
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摘要:
Microwave plasma oxidation (below 200 °C) of partially strain-compensatedSi1−x−yGexCy(Ge:C=20:1 and 40:1) with and without a Si cap layer is reported. The electrical properties of grown oxides have been characterized using a metal–oxide–semiconductor structure. Fixed oxide charge density and mid-gap interface trap density are found to be2.9×1011/cm2and8.8×1011/cm2/eV,respectively, for directly oxidizedSi0.79Ge0.2C0.01film. The oxide on samples with low C (0.5&percent;) concentration, exhibits hole trapping, whereas electron trapping is observed for oxides on alloys containing 1&percent; C. ©1998 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.121028
出版商:AIP
年代:1998
数据来源: AIP
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42. |
Liquid source metal–organic chemical-vapor deposition of high-qualityYBa2Cu3O7−xfilms on polycrystalline silver substrates |
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Applied Physics Letters,
Volume 72,
Issue 10,
1998,
Page 1253-1255
D. B. Studebaker,
J. Zhang,
T. J. Marks,
Y. Y. Wang,
V. P. Dravid,
J. L. Schindler,
C. R. Kannewurf,
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摘要:
High-temperature superconductingYBa2Cu3O7−xfilms were grown by liquid delivery metal–organic chemical-vapor deposition on silver-coated stainless-steel substrates. The films are highlyc-axis oriented, have aTcabove 90 K, and exhibit a surface resistance of 110 &mgr;&OHgr; at 77 K and 3 GHz. ©1998 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.121029
出版商:AIP
年代:1998
数据来源: AIP
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