摘要:

A pulsed laser deposition (PLD) oscillating target scanning technique, in which the laser ablates the target from opposing directions as the deposition proceeds, is described and compared to the conventional technique of target rotation over a cumulative ablation exposure of ∼1500 shots/site. Using conventional rotation the plume direction is eventually displaced by 6° while both the number density and size of PLD associated particles increase. In contrast, the oscillating technique results in a spatially stable plume (displacement <2°) while the particle density and size both decrease. This technique allows one to operate in a steady state mode without routine target maintenance, improves plume ‘‘walk off,’’ and deposition reproducibility while decreasing the production of particles. ©1995 American Institute of Physics. 

ISSN:0003-6951    

DOI:10.1063/1.113261

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The growth of high‐quality, sputter‐deposited epitaxial PtMnSb(001) on W(001)/MgO(001) is described. X‐ray diffraction results indicate that PtMnSb grows unrotated on the W seed layer with a modest in‐plane tensile strain. Polar magneto‐optic Kerr effect measurements show a peak rotation of 1.02° at 575 nm. In‐plane magnetization is observed, indicating that the level of strain in the film is insufficient to induce perpendicular magnetization. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113262

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

We investigated the effects of additives on the preferred orientation of the Mn–Zn ferrite thin films deposited on SiO2(1000 A˚)/Si(100) at 350 °C by ion beam sputtering. A mosaic target, consisting of a single crystal (100) Mn–Zn ferrite with a metal strip on it, was employed as the target. The preferred orientation of the ferrite films was (hhh) for the target with or without Fe and Zn additives, and (h00) for Ti addition. In the case of Cu addition, a weak (311) orientation appeared with a strong (hhh) preferred orientation. The origin of the changes in the preferred orientation with different additives was discussed. The easy axis of magnetization, however, lay in the direction parallel to the film plane due to large shape anisotropy, irrespective of the preferred orientation. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113270

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

An improved design of a resonant photoacoustic spectrophone is reported for aerosol absorption measurements by using a near‐infrared laser diode (&lgr;=802 nm;P=450 mW) in combination with a double‐pass configuration for excitation of azimuthal modes and right‐angle mounting of two electret microphones for signal detection. As a result of the new spectrophone setup a small‐sized portable sensor system for real‐timeinsituelemental carbon monitoring is presented. The detection limit is estimated to 4.5×10−8cm−1or 1.5 &mgr;g elemental carbon per m3. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113271

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

We have measured the steady‐state current supported by a variety of contacts on a polytetraphenylbenzidine hole transport polymer. When glassy carbon is used as a hole injecting contact to the polymer, the current is found to exhibit prototypical emission limited behavior. Unique features of the electric field and temperature dependence of the emission limited current cannot be explained by injection theories appropriate to conventional band type semiconductors. A model of thermally assisted tunneling from carriers at the Fermi level of the contact to localized states in the polymer has been formulated. This model is able to critically account for key features in the experimental data. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113272

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.113273

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.113274

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.114224

出版商:AIP    

年代:1995

数据来源: AIP