41. |
Measurement of minority‐carrier lifetime in GaAs using the transient response of MOS capacitors |
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Applied Physics Letters,
Volume 34,
Issue 1,
1979,
Page 106-108
G. Vitale,
E. E. Crisman,
J. J. Loferski,
B. Roessler,
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摘要:
The minority‐carrier generation lifetime has been measured in GaAs by observing the transient capacitance that occurs when an MOS is switched from accumulation to deep depletion. Application of this technique requires the fabrication of an MOS that shows inversion; this has been done by growing a native GaAs oxide with plasma oxidation. Preliminary results are reported on both lifetime and surface recombination velocity inp‐type GaAs.
ISSN:0003-6951
DOI:10.1063/1.90598
出版商:AIP
年代:1979
数据来源: AIP
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42. |
Donor‐levels analysis in GaAlAs double heterostructure |
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Applied Physics Letters,
Volume 34,
Issue 1,
1979,
Page 108-110
B. Balland,
G. Vincent,
D. Bois,
P. Hirtz,
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摘要:
Capacitance versus temperature, capacitance, and current DLTS, together with optical excitation, are used to analyze the donors in then‐type Sn‐doped GaAlAs layer of LED double heterostructures. Two donor levels are found to be associated with Sn. One of them shows a persistent photoconductivity effect at low temperature.
ISSN:0003-6951
DOI:10.1063/1.90599
出版商:AIP
年代:1979
数据来源: AIP
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43. |
Improvements of ’’insitu’’ multifilamentary Nb3Sn superconducting wires |
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Applied Physics Letters,
Volume 34,
Issue 1,
1979,
Page 111-113
R. Roberge,
S. Foner,
E. J. McNiff,
B. B. Schwartz,
J. L. Fihey,
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摘要:
’’Insitu’’ multifilamentary Nb3Sn wires with improved high‐field properties are reported. An overall critical current density greater than 104A/cm3is achieved at 14 T for a Cu–36 wt%–Nb–20 wt% Sn material. The results are comparable to the best reported commercial multifilamentary Nb3Sn materials.
ISSN:0003-6951
DOI:10.1063/1.90600
出版商:AIP
年代:1979
数据来源: AIP
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44. |
Fe‐B‐C amorphous alloys with room‐temperature saturation induction over 17.5 kG |
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Applied Physics Letters,
Volume 34,
Issue 1,
1979,
Page 113-115
S. Hatta,
T. Egami,
C. D. Graham,
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摘要:
Amorphous alloys of Fe86B14−xCx(5⩽x⩽7) were found to have room‐temperature saturation induction approaching 18 kG after appropriate heat treatment. The alloys possess excellent soft‐magnetic properties with the ac loss less than 0.5 W/kg at 17 kG and 60 Hz. It is expected that the application of these alloys to power transformers will produce very large savings of energy.
ISSN:0003-6951
DOI:10.1063/1.90601
出版商:AIP
年代:1979
数据来源: AIP
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45. |
Susceptibility measurements on the ion‐implanted layer of bubble garnet films |
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Applied Physics Letters,
Volume 34,
Issue 1,
1979,
Page 115-117
I. Maartense,
C. W. Searle,
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摘要:
Measurements in the plane of bubble films show a sharp maximum in the ac susceptibility of implanted layers when the underlying film is saturated. The nature of this peak and its behavior as a function of bias field and etching carry information about the layer’s uniformity and anisotropy as well as the film’s domain collapse and stripe propagation fields and coercivity.
ISSN:0003-6951
DOI:10.1063/1.90602
出版商:AIP
年代:1979
数据来源: AIP
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46. |
Oscillations in the emf of solid‐state electrochemical oxygen sensors |
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Applied Physics Letters,
Volume 34,
Issue 1,
1979,
Page 117-119
R. E. Hetrick,
E. M. Logothetis,
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摘要:
Oscillations have been found in the emf of ZrO2electrochemical cells used for high‐temperature oxygen sensing in nonequilibrium CO,O2environments. This behavior is shown to arise from an oscillation in the platinum‐catalyzed oxidation of CO. The use of a ZrO2cell provides a new technique for studying oscillating reactions of this type.
ISSN:0003-6951
DOI:10.1063/1.90577
出版商:AIP
年代:1979
数据来源: AIP
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47. |
Erratum: Intense lasing in discharge excited noble‐gas monochlorides |
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Applied Physics Letters,
Volume 34,
Issue 1,
1979,
Page 120-120
Robert C. Sze,
Peter B. Scott,
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ISSN:0003-6951
DOI:10.1063/1.90579
出版商:AIP
年代:1979
数据来源: AIP
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