摘要:

Amorphous hydrogenated carbon (a–C:H) is introduced as a constituent of a two–layer resist system for lithography with a scanning tunneling microscope (STM) operating in air. The resist is made up of a thin electron sensitive and chemically amplified top resist (≤50 nm) anda–C:H as a thick conducting and etchable bottom resist. In this setup the bottom resist acts as the counter electrode allowing in principle operation on insulating substrates. We show that it is possible to generate structures with high aspect ratios by transfering the developed top resist patterns by means of oxygen reactive ion etching (RIE) into the bottom resist and halogen RIE into silicon substrates. Linewidths between 100 and 50 nm have been observed in the bottom resist as well as in the substrates. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.114995

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

ISSN:0003-6951    

DOI:10.1063/1.114996

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.114997

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

ISSN:0003-6951    

DOI:10.1063/1.114998

出版商:AIP    

年代:1995

数据来源: AIP