41. |
Linearity of unshielded spin-valve sensors |
|
Applied Physics Letters,
Volume 70,
Issue 4,
1997,
Page 523-525
N. Sugawara,
M. Takiguchi,
T. Yaoi,
N. Negoro,
K. Kagawa,
A. Okabe,
K. Hayashi,
H. Kano,
Preview
|
PDF (64KB)
|
|
摘要:
Linearity of the magnetoresistive (MR) transfer curve for an unshielded spin-valve (SV) sensor was studied. When the NiFe free layer thickness is greater than 5.0 nm, the anisotropic magnetoresistive (AMR) effect in it may overlap the giant magnetoresistive effect of the SV structure and deteriorate the linearity of the sensor response. By using a bilayer of NiFe/NiFeTa as the free layer for suppressing the AMR effect, superior linearity was obtained without a loss of the MR ratio. This new SV structure shows 5.0&percent; as the MR ratio and −32.1 dB as second harmonic distortion, compared to −19.5 dB for a conventional one. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118313
出版商:AIP
年代:1997
数据来源: AIP
|
42. |
Metglas thin film with as-deposited domain alignment for smart sensor and actuator applications |
|
Applied Physics Letters,
Volume 70,
Issue 4,
1997,
Page 526-528
Yong Lu,
Arokia Nathan,
Preview
|
PDF (79KB)
|
|
摘要:
We report on the deposition ofin-situdomain aligned magnetostrictive Metglas2605S2(Fe78Si9B13)thin films by dc magnetron sputtering. The as-deposited thin film has a well oriented magnetic domain structure. A saturation magnetostriction of 30×10−6is observed, which is comparable to the data published on this material. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119273
出版商:AIP
年代:1997
数据来源: AIP
|
43. |
A noninvasive bunch length monitor for femtosecond electron bunches |
|
Applied Physics Letters,
Volume 70,
Issue 4,
1997,
Page 529-531
D. X. Wang,
G. A. Kraft,
E. Price,
P. A. D. Wood,
D. W. Porterfield,
T. W. Crowe,
Preview
|
PDF (125KB)
|
|
摘要:
A bunch length monitor for ultrashort (90 fs to 1 ps) electron bunches using a coherent synchrotron radiation detection techniques has been developed in a collaboration between the Thomas Jefferson National accelerator Facility (Jefferson Lab) and the University of Virginia. The noninvasive, high-resolution, high-sensitivity, low-noise monitor employs a state-of-the-art “bandpass” GaAs Schottky whisker diode operated at room temperature. This letter presents the monitor’s performance. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118423
出版商:AIP
年代:1997
数据来源: AIP
|