摘要:

ZnxCd1−xS films suitable for use in solar cells have been formed by simultaneous evaporating of ZnS and CdS. Lattice parameter and band gap are found to change almost linearly with composition. Electrical resistivity increases from <1 to ≳1010&OHgr; cm asxincreases from 0 to 1. Nonseries‐resistance‐limited ZnxCd1−xS‐CuyS photovoltaic cells have exhibited open‐circuit voltages greater than 0.7 V, apparently due to a better match between the ZnxCd1−xS and CuyS electron affinities.

ISSN:0003-6951    

DOI:10.1063/1.89162

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

The change in electroluminescence intensity as a function of hydrostatic pressure is measured for N‐doped GaAs1−xPxdiodes in the composition regionsx∼0.48 and ∼0.65. A large decrease with pressure is observed for the short‐range N transition (x∼0.48) reflecting the effect of the nearby &Ggr; conduction band edge. The longer‐range NXtransition (x∼0.65) is observed to be much less sensitive to pressure, which agrees with the expected smaller effect of &Ggr; on NXat this composition. Based on N and NXoscillator strengths provided by a recent theoretical model for GaAs1−xPx : N, calculations of the relative change in external quantum efficiency are found to fit the data well.

ISSN:0003-6951    

DOI:10.1063/1.89163

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Dominant hole conduction is observed in thin Si3N4films deposited on silicon with holes being injected from either aluminum or gold electrodes. Hole transport is confirmed by employing a shallow junction diode detector. Such a diode can serve also as excellent means for separating conduction currents from transient displacement currents under pulsed conditions.

ISSN:0003-6951    

DOI:10.1063/1.89164

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Electroluminescence has been obtained in forward‐biasedp‐i‐ndiodes, and also in Schottky barrier diodes fabricated from discharge‐produced amorphous Si. The emission at 78 °K in both electroluminescence and photoluminescence peaks at 1.28±0.08 eV in a 0.2‐eV broad band with an external quantum efficiency of ∼10−3.

ISSN:0003-6951    

DOI:10.1063/1.89165

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

In electron tunneling measurements into high‐Tcgetter‐sputtered Nb3Ge films, two energy gaps are clearly identified. The larger, 2&Dgr;=7.8 meV, we associate with well‐orderedA15 material. The smaller, 2&Dgr;∼1.0 meV, we suggest indicates the presence of very disordered material, because we cannot identify any known phase of the NbGe system with this low gap, and because a most interesting ’’phase’’ of Nb3Ge, with 2&Dgr;=0.86 meV andTc=3.06 K, was isolated by sputtering from the same target onto a cold (100−200 °C) substrate.

ISSN:0003-6951    

DOI:10.1063/1.89166

出版商:AIP    

年代:1976

数据来源: AIP