摘要:

Using dose resolved energy loss and energy filtered imaging, the mechanism of a new high resolution resist, AlF3, is examined. It is found that exposure induces mass loss including the displacement of Al ions. From the energy filtered images, it is observed that the Al coats the walls of the exposed area. Further, it is demonstrated that high resolution patterns exposed in AlF3can be replicated into Si3N4substrates.

ISSN:0003-6951    

DOI:10.1063/1.95292

出版商:AIP    

年代:1984

数据来源: AIP