摘要:

Al2O3tunnel barriers I, formed by the oxidization of Al metal of various thicknesses between two ferromagnetic (FM) films were investigated to understand the influence of overlayer metal Al on the junction magnetoresistance (JMR). The optimum thickness of Al was observed to lie in the range of 1–1.6 nm to achieve good JMR in FM–I–FM junctions. Additionally, such junctions can be used to study the magnetic proximity effect in ferromagnet/normal metal bilayer systems. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118168

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

Pt/(Ba, Sr)TiO3/Ptcapacitors fabricated by sputtering technique showed abnormally higher leakage current when negative bias was applied to the top electrode. In this letter, two kinds of processes were attempted to reduce high leakage current of Pt/BST/Pt capacitors for dynamic random access memory devices: (1) postannealing underO2atmosphere and (2) adding oxygen into sputtering gas of platinum top electrode. These processes were very effective to reduce the oxygen vacancy in the BST films which are mostly responsible for such a high leakage current. The higher reverse currents were significantly lowered by these processes, so that we could obtain symmetric current versus voltage curves of Pt/BST/Pt capacitors. ©1997 American Institute of Physics. 

ISSN:0003-6951    

DOI:10.1063/1.118746

出版商:AIP    

年代:1997

数据来源: AIP