摘要:

Optical retardation measurements were performed on rubbed polyimide-coated substrates used for liquid-crystal cells. Based on measurements with and without a refractive index matching fluid, the retardation component due to the rub-induced scratches was extracted, and found to dominate the total retardation at higher rubbing strengths. Additionally, atomic force microscope measurements were performed to examine the rub-induced surface topography. The retardation calculated from the topography measurements was found to be in agreement with the optical results.©1998 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.121226

出版商:AIP    

年代:1998

数据来源: AIP

摘要:

A nondestructive, noncontact method of imaging resistance variations along electrical conductors is described. It is especially suitable for locating resistance variations in interconnect lines buried beneath layers of passivation. In its implementation, an intensity modulated laser beam is scanned over the circuit carrying a dc current and the voltage induced in the circuit at the modulation frequency is used to vary the intensity of a synchronously scanned display. Resistance variations, such as caused by defects, produce variations in the image thereby identifying their spatial location. Under certain circumstances, other features in the immediate vicinity of the conductors, such as remanent photoresist and decohered interfaces, can also be imaged. An advantage of the method is that the electrical circuitry in the device or package can be used.©1998 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.121227

出版商:AIP    

年代:1998

数据来源: AIP

摘要:

With ann-type orp-type semiconductor as a top electrode in contact with ferroelectricPb(Zr0.53Ti0.47)O3thin film, polarization fatigue has been studied to investigate the effect of charge carrier injection. Electron injection is shown to be correlated with fatigue while hole injection is not. Current blocking by an insulatingSiO2layer prevents fatigue as well. The enhanced mobility of oxygen vacancies, partially de-ionized by association with the injected electrons, is proposed to be the mechanism for the electron effect.©1998 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.121228

出版商:AIP    

年代:1998

数据来源: AIP

摘要:

A remarkably low turn-on field of about 1 V/&mgr;m has been observed in electron field emission from planar SiC/Si heterostructures formed by high dose C implantation into Si using a metal vapor vacuum arc ion source. An implant energy of 35 keV was used to a dose of1.0×1018ions/cm2with subsequent annealing in nitrogen at 1200 °C for 2 h. X-ray photoelectron spectroscopy showed that a thin surface stoichiometric SiC layer, with a thickness of about 150 nm, had been formed. Atomic force microscopy showed that there are densely distributed small protrusions formed on the surface. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.©1998 American Institute of Physics. 

ISSN:0003-6951    

DOI:10.1063/1.121229

出版商:AIP    

年代:1998

数据来源: AIP