摘要:

To increase the operating temperature of a single electron circuit, it is necessary to reduce the capacitance of the tunnel junction. Usually this is done by reducing the linewidth of the capacitor forming metal stripes, which are sandwiched with an intermediate insulator. The use of alternative materials, however, allows capacitance reduction by means of thicker isolation layers or by a capacitor geometry different from a sandwich. The new SECO (step edge cut off) method, for the fabrication of single electron devices will be presented. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.115172

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Pulsed laser ablation deposition was used to synthesize polycrystalline SrBi2Ta2O9layered ferroelectric thin films on platinized silicon substrates. Top electrodes were produced by dc magnetron sputter deposition to fabricate capacitors for electrical tests. The polarization electric field hysteresis loops showed saturation in the 2–4 V range with a coercive field of 25 kV/cm. The capacitors showed practically no polarization fatigue up to 1011switching cycles. The resistivity of the SrBi2Ta2O9for a coercive field of 100 kV/cm was approximately 2×1011&OHgr; cm. Retention and imprint characteristics of these capacitors showed no degradation as a function of cumulative waiting times. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.115173

出版商:AIP    

年代:1995

数据来源: AIP