摘要:

Surface deformations appear in chalcogenide glasses when irradiated by scanned or pulsed electron beams accelerated at 10–30 kV. The deformation consists of a central expansion which accompanies peripheral depressions, and the scale is typically micrometer. The deformation seems to be produced by electrostatic force and electro-induced fluidity. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118356

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

The heat transfer problem of a moving source of heat scanning over a semi-infinite solid is of considerable importance for surface processing with high energy beams. The analytical solution of a moving Gaussian beam is extended by superposition of several Gaussian beams in order to approximate real beam shapes, thus providing high flexibility and accuracy. By superimposing two concentric beams, a real intensity profile with a central minimum was approximated with an accuracy of 13&percent; compared to 35&percent; for the conventional Gaussian beam approach. For the corresponding temperature field, an error of 57&percent; for the depth and 17&percent; for the width of the melt pool was eliminated. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118358

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

Applying an absorber technique, the experimental shape and width of a parametric x-radiation line has been determined. The 9 keV radiation was produced by bombarding a diamond crystal of 55 &mgr;m thickness with electrons of 6.8 MeV. The variance of the spectral line distribution was found to depend on the tilt angle of the crystal and to have a magnitude of &sgr;=51 eV. Simulations based on a Monte Carlo method exhibit that the observed variance is mainly influenced by multiple scattering of electrons passing through the crystal (≈43 eV) and the finite detector opening (≈18 eV), leaving for the intrinsic linewidth a value of the order of 1 eV. The spectral density of the line was found to beJ≈10−7photons/(electron×sr×eV). ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118359

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

We have found that Ta–Sn–O films prepared on indium tin oxide (ITO) electrodes by magnetron cosputtering ofTa2O5andSnO2have much higher breakdown field strength than theTa2O5films on the ITO electrodes. The highly insulating Ta–Sn–O films were obtained in the Sn concentration range of 3–40 at. &percent;. The figure of merit, which was defined by the multiplication of the breakdown field strength by the relative dielectric constant, of the Ta–Sn–O films was found to become a maximum in the Sn concentration of about 3 at. &percent;. The experimental results of temperature dependence of the leakage currents indicated that the conduction mechanisms at room temperature changed from Poole–Frenkel type to Fowler–Nordheim tunneling type by addingSnO2intoTa2O5films. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118360

出版商:AIP    

年代:1997

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.119271

出版商:AIP    

年代:1997

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.119272

出版商:AIP    

年代:1997

数据来源: AIP