摘要:

Shallow BF2and B implants (42 keV, 2×1015cm−2) were conducted at either liquid nitrogen or room temperature into deeply preamorphized (100) Si. Cross‐sectional transmission electron microscopy revealed that subsequent rapid thermal annealing (RTA) of the room‐temperature implanted BF2sample in the temperature range 950–1150 °C for 10 s created three classes of secondary defects at three different depth levels. The depths corresponded closely to the projected range of the BF2implant, the deep amorphous/crystalline interface, and the region immediately below the interface. In contrast, RTA of preamorphized Si with or without the shallow B implant both resulted in a high perfection surface region with secondary defects only in the region below the deep amorphous/crystalline interface. A phenomenological model for nucleation of the separate layers of defects is presented.

ISSN:0003-6951    

DOI:10.1063/1.94766

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Platinum etching characteristics in aqua regia have been studied. It was found that prior exposure to an oxygen plasma inhibits the dissolution of platinum in aqua regia. Oxygen, far more abundant in the exposed platinum than in the unexposed platinum, plays a key role in forming an inhibition layer, such as PtO2, which prevents chlorine ion attack. This inhibition layer appears to retard platinum etching effectively in chlorine‐based etch solutions. The layer has been observed to form at a fast rate, and it is insensitive to the oxygen partial pressure in the plasma chamber. The insoluble characteristics of both the inhibited platinum and the platinum silicide in aqua regia make it feasible to form an unframed contact interconnection for applications of very large scale integration.

ISSN:0003-6951    

DOI:10.1063/1.94767

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

IVcurves of long annular Josephson junctions (circumference much larger than the Josephson penetration depth) have been investigated numerically. It is concluded that an experiment on such a system is preferable to the usual linear geometries and will allow a study both of the undisturbed motion of a fluxon, and the fluxon‐antifluxon collision process. The simulations show that the fluxon‐antifluxon collisions generate long wavelength plasma oscillations which may give rise to fine structure in theIVcurves.

ISSN:0003-6951    

DOI:10.1063/1.94768

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We have fabricated 30‐nm lines on 200‐nm centers in CaF2using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF2film and reaction to CaO followed by development in H2O.

ISSN:0003-6951    

DOI:10.1063/1.94769

出版商:AIP    

年代:1984

数据来源: AIP