41. |
Enhancement of microbeam x-ray fluorescence analysis using monolithic polycapillary focusing optics |
|
Applied Physics Letters,
Volume 71,
Issue 23,
1997,
Page 3441-3443
N. Gao,
I. Yu. Ponomarev,
Q. F. Xiao,
W. M. Gibson,
D. A. Carpenter,
Preview
|
PDF (215KB)
|
|
摘要:
A monolithic polycapillary focusing optic was tested in the microbeam x-ray fluorescence system at the Oak Ridge Center for Manufacturing Technology. The optic was designed to cover a wide energy range from 4 keV to 20 keV. The focal spot size of the output beam at 17.4 keV (Mo K&agr;)was measured to be 21&mgr;m full width of half maximum. An average beam intensity of1.5×105photon/s/&mgr;m2was obtained at the focus for Mo K&agr;line using a 12 W microfocus x-ray source. This intensity is about 2400 times over that of a direct beam at 100 mm away from the x-ray source. The small, intense x-ray beam obtained was used to analyze and map the compositions of different elements in industrial samples. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.120360
出版商:AIP
年代:1997
数据来源: AIP
|
42. |
Band alignments of the platinum/SrBi2Ta2O9interface |
|
Applied Physics Letters,
Volume 71,
Issue 23,
1997,
Page 3444-3446
C. D. Gutleben,
Preview
|
PDF (60KB)
|
|
摘要:
In situx-ray photoelectron spectroscopy was used to determine the band alignments of the platinum toSrBi2Ta2O9contact. The interfaces were prepared by incremental evaporation of Pt onto a vacuum/O2annealed polycrystalline surface grown by the sol-gel method. The results track the development of the band alignments from the submonolayer to the thick metal-film regimes. The Fermi level to ferroelectric valence-band offset of the asymptotic full metal contact was found to be 2.9 eV. The contact was also clearly shown to be highly disrupted with a bismuth-platinum alloy forming at the interface. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.120402
出版商:AIP
年代:1997
数据来源: AIP
|
43. |
Erratum: “Full band Monte Carlo investigation of electron transport in strained Si grown onSi1−xGexsubstrates” [Appl. Phys. Lett.70, 2144 (1997)] |
|
Applied Physics Letters,
Volume 71,
Issue 23,
1997,
Page 3447-3447
F. M. Bufler,
P. Graf,
S. Keith,
B. Meinerzhagen,
Preview
|
|
ISSN:0003-6951
DOI:10.1063/1.120403
出版商:AIP
年代:1997
数据来源: AIP
|
44. |
Erratum: “Lattice expansion of Ca and Ar ion implanted GaN” [Appl. Phys. Lett.71, 2313 (1997)] |
|
Applied Physics Letters,
Volume 71,
Issue 23,
1997,
Page 3448-3448
C. Liu,
B. Mensching,
K. Volz,
B. Rauschenbach,
Preview
|
|
ISSN:0003-6951
DOI:10.1063/1.120405
出版商:AIP
年代:1997
数据来源: AIP
|