41. |
Two‐bandpass fiber‐optic radiometry for monitoring the temperature of photoresist during dry processing |
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Applied Physics Letters,
Volume 68,
Issue 18,
1996,
Page 2583-2585
Yair Dankner,
O. Eyal,
A. Katzir,
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摘要:
The temperature of a thin photoresist layer on a silicon wafer was measuredinsituduring dry etching by using a silver halide optical fiber noncontact thermometer. A two‐bandpass radiometer was constructed to reduce errors arising from geometrical factors and emissivity changes. Such a system may be used to monitor surface temperatures during dry processing of semiconductors and to prevent overheating that may cause damage, such as cross linking of photoresists. ©1996 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.116191
出版商:AIP
年代:1996
数据来源: AIP
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42. |
Nanolithographic templates from diblock copolymer thin films |
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Applied Physics Letters,
Volume 68,
Issue 18,
1996,
Page 2586-2588
P. Mansky,
C. K. Harrison,
P. M. Chaikin,
R. A. Register,
N. Yao,
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摘要:
We describe a technique for creating a thin polystyrene film containing a periodic array of cylindrical holes, with a hole size of approximately 13 nm and a lattice constant of 27 nm. The starting material is a polystyrene‐polybutadiene diblock copolymer, which self‐assembles into a hexagonally packed array of polybutadiene cylinders embedded in a polystyrene matrix. A technique described previously is used to orient the cylinders normal to the plane of the film. The polybutadiene domains are then removed by reaction with ozone, which attacks the double bonds in the polybutadiene backbone. Films of this type could potentially be used as templates for nanolithography on a scale not readily accessed by other techniques. ©1996 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.116192
出版商:AIP
年代:1996
数据来源: AIP
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43. |
Comment on ‘‘Temporal response of a high‐csuperconducting field‐effect transistor’’ [Appl. Phys. Lett.67, 2076 (1995)] |
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Applied Physics Letters,
Volume 68,
Issue 18,
1996,
Page 2589-2589
N. Chandrasekhar,
Oriol T. Valls,
A. M. Goldman,
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ISSN:0003-6951
DOI:10.1063/1.116193
出版商:AIP
年代:1996
数据来源: AIP
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44. |
Response to ‘‘Comment on ‘Temporal response of a high‐csuperconducting field effect transistor’ ’’ [Appl. Phys. Lett.68, 2589 (1996)] |
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Applied Physics Letters,
Volume 68,
Issue 18,
1996,
Page 2590-2590
R. Schneider,
R. Auer,
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ISSN:0003-6951
DOI:10.1063/1.116194
出版商:AIP
年代:1996
数据来源: AIP
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45. |
Erratum: ‘‘Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells’’ [Appl. Phys. Lett.67, 3432 (1995)] |
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Applied Physics Letters,
Volume 68,
Issue 18,
1996,
Page 2591-2591
W. Z. Shen,
S. C. Shen,
W. G. Tang,
Y. Zhao,
A. Z. Li,
W. Z. Shen,
S. C. Shen,
W. G. Tang,
Y. Zhao,
A. Z. Li,
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ISSN:0003-6951
DOI:10.1063/1.116792
出版商:AIP
年代:1996
数据来源: AIP
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