51. |
Radiative efficiency limit of terrestrial solar cells with internal carrier multiplication |
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Applied Physics Letters,
Volume 67,
Issue 7,
1995,
Page 1028-1030
Ju¨rgen H. Werner,
Rolf Brendel,
Hans‐Joachim Queisser,
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摘要:
Charge multiplication by hot carriers in semiconductors opens a new perspective for improved photovoltaic energy conversion. Here, we estimate the theoretical limit for the efficiency of solar cells that make use of the best possible carrier multiplication and have the lowest possible recombination loss, i.e., radiative recombination only. For a terrestrial cell under 100 mW/cm2air mass 1.5 global illumination, the uppermost efficiency amounts to 44.2%. Cells with internal carrier multiplication require a modified description of their saturation current density. ©1995 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.114719
出版商:AIP
年代:1995
数据来源: AIP
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52. |
Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations |
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Applied Physics Letters,
Volume 67,
Issue 7,
1995,
Page 1031-1033
S. Zafar,
K. A. Conrad,
Q. Liu,
E. A. Irene,
G. Hames,
R. Kuehn,
J. J. Wortman,
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摘要:
A novel method is presented for measuring the thicknesses of thin (<60 A˚) silicon dioxide (SiO2) films using the oscillations in the Fowler‐Nordheim tunneling currents. An important feature of the proposed method is that the accuracy of this method increases with decreasing oxide thickness and thicknesses changes of ∼1 A˚ can be detected. The oscillations are also used for measuring the average effective electron mass in the conduction band of SiO2. ©1995 American Institute of Physics
ISSN:0003-6951
DOI:10.1063/1.114720
出版商:AIP
年代:1995
数据来源: AIP
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53. |
Comment on ‘‘Effect of electron temperature on negative hydrogen ion production in a low‐pressure Ar discharge plasma with methane’’ [Appl. Phys. Lett.63, 1619 (1993)] |
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Applied Physics Letters,
Volume 67,
Issue 7,
1995,
Page 1034-1034
Lal A. Pinnaduwage,
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摘要:
The author proposes a mechanism for the efficient production of negative Hydrogen ions in a low−pressure Ar discharge plasma with methane using a novel pin−hollow cathode as reported in Appl. Phys. Lett. 63, 1619 (1993). (AIP) ©1995 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.114721
出版商:AIP
年代:1995
数据来源: AIP
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54. |
Response to ‘‘Comment on ‘Effect of electron temperature on negative‐hydrogen ion production in a low‐pressure Ar discharge plasma with methane’ ’’ [Appl. Phys. Lett.67, 1034 (1995)] |
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Applied Physics Letters,
Volume 67,
Issue 7,
1995,
Page 1035-1035
S. Iizuka,
N. Sato,
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ISSN:0003-6951
DOI:10.1063/1.114722
出版商:AIP
年代:1995
数据来源: AIP
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55. |
Erratum: ‘‘Effect of coherency stresses on the hardness of epitaxial Fe(001)/Pt(001) multilayers’’ [Appl. Phys. Lett.66, 2969 (1995)] |
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Applied Physics Letters,
Volume 67,
Issue 7,
1995,
Page 1036-1036
B. J. Daniels,
W. D. Nix,
B. M. Clemens,
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ISSN:0003-6951
DOI:10.1063/1.115562
出版商:AIP
年代:1995
数据来源: AIP
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56. |
Erratum: ‘‘Crystal morphology and three‐dimensional‐like growth model of DyBa2Cu3O7−dsuperconducting materials synthesizedinsituin 0.6 T’’ [Appl. Phys. Lett.65, 3386 (1994)] |
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Applied Physics Letters,
Volume 67,
Issue 7,
1995,
Page 1037-1037
R. Cloots,
N. Vandewalle,
M. Ausloos,
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ISSN:0003-6951
DOI:10.1063/1.115563
出版商:AIP
年代:1995
数据来源: AIP
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