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51. |
Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As |
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Applied Physics Letters,
Volume 44,
Issue 1,
1984,
Page 139-141
H. L. Sto¨rmer,
A. C. Gossard,
W. Wiegmann,
R. Blondel,
K. Baldwin,
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摘要:
The temperature dependence of the mobility of two‐dimensional hole systems at modulation‐doped GaAs‐(AlGa)As heterojunctions is determined. Its shape follows closely the equivalent curve for high‐purityp‐type bulk GaAs. Low‐temperature mobilities beyond 4×104cm2/Vs are found for areal hole densities of 5×1011cm−2. The equivalent scattering times reach those of the best modulation‐doped electron systems. In the temperature range where acoustic mode scattering prevails aT−3/4dependence was observed. Studies under light illumination could not detect any persistent photoconductive effect in two‐dimensional holes.
ISSN:0003-6951
DOI:10.1063/1.94580
出版商:AIP
年代:1984
数据来源: AIP
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52. |
Iodine ion milling of indium‐containing compound semiconductors |
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Applied Physics Letters,
Volume 44,
Issue 1,
1984,
Page 142-144
N. G. Chew,
A. G. Cullis,
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摘要:
The effects of reactive I+ion beams, derived from a source of solid elemental I, on In‐containing compound semiconductors have been investigated using transmission electron microscopy. The results are compared with the effects produced by beams of Ar+and Xe+inert gas ions. It is shown that the surface accumulation of metallic In due to the disproportionation normally associated with ion milling of these materials can be eliminated by the use of I+ion beams. Transmission electron microscope specimens in cross‐sectional configuration are used to demonstrate the excellent results which may be obtained by I+ion milling of InP and InSb.
ISSN:0003-6951
DOI:10.1063/1.94582
出版商:AIP
年代:1984
数据来源: AIP
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53. |
Polyimide passivation of In0.53Ga0.47As, InP, and InGaAsP/InPp‐njunction structures |
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Applied Physics Letters,
Volume 44,
Issue 1,
1984,
Page 145-147
R. Yeats,
K. Von Dessonneck,
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摘要:
Techniques for passivating In0.53Ga0.47As, InGaAsP, InP, and InGaAsP/InPp‐njunction structures with polyimide have been developed. Low stable leakage current is maintained for prolonged bias, even after exposure to high temperatures (∼320 °C) during packaging. 150‐&mgr;m‐diam In0.53Ga0.47As photodiodes with a breakdown voltage of ∼50 V were passivated with polyimide and were found to consistently have leakage currents of ∼10 nA at a 20‐V bias.Details of the passivation process are given.
ISSN:0003-6951
DOI:10.1063/1.94583
出版商:AIP
年代:1984
数据来源: AIP
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54. |
High‐energy product Nd‐Fe‐B permanent magnets |
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Applied Physics Letters,
Volume 44,
Issue 1,
1984,
Page 148-149
J. J. Croat,
J. F. Herbst,
R. W. Lee,
F. E. Pinkerton,
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摘要:
We have explored the hard magnetic properties of melt‐spun Nd‐Fe‐B alloys. A maximum energy product of 14.1 MG Oe has been observed, the highest value ever reported for a light rare earth‐iron material. X‐ray analyses indicate that the alloys exhibiting optimum characteristics are comprised of roughly spherical crystallites of an equilibrium Nd‐Fe‐B intermetallic phase. The observed grain sizes are in or near the estimated single‐domain range, suggesting that the coercivity arises principally from the formation of single‐domain particles.
ISSN:0003-6951
DOI:10.1063/1.94584
出版商:AIP
年代:1984
数据来源: AIP
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55. |
Comment on ‘‘Lattice location of chromium in semi‐insulating GaAs by ion channeling techniques’’ [Appl. Phys. Lett.42, 599 (1983)] |
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Applied Physics Letters,
Volume 44,
Issue 1,
1984,
Page 150-150
P. P. Pronko,
R. S. Bhattacharya,
O. W. Holland,
B. R. Appleton,
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摘要:
A comment on lattice location of chromium by ion channeling and detection of x‐ray signals of Cr‐K&agr; excited by 1‐MeV H+from a Cr‐doped GaAs is presented.
ISSN:0003-6951
DOI:10.1063/1.94585
出版商:AIP
年代:1984
数据来源: AIP
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