摘要:

By using very high frequency (100 MHz) plasma, diamond was synthesized with only rf power in parallel plate electrodes configuration from a mixture gas of methane and hydrogen. Deposition conditions are similar to those used so far in medium pressure methods, i.e., the pressure, methane concentration, substrate temperature, and rf power used are 90–20 Torr, 5–0.5&percent;, 900 °C, and 400–1000 kW, respectively. This plasma is very stable and the power density used is small. Furthermore, diamond formed at a pressure lower than that used in dc plasma chemical vapor deposition. These results suggest the possibility of the application of this method to large area deposition of diamond. However, the quality of the diamonds obtained are not yet very high. Methods of improvement are also discussed. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.120184

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

The adhesion strength between sputter deposited Al on Teflon AF 1600 was increased from<0.15 N/mmto>0.7 N/mmby treating the interface with reactive ion assisted interface bonding and mixing (RIAIBM) and subsequent annealing. X-ray photoelectron spectroscopy measurements indicate the RIAIBM process and subsequent annealing promotes material mixing, implantation of the reactive species, bond breaking, and new bond formation at the interface. These factors are known to increase adhesion strength. The implementation of RIAIBM is straight forward and is suitable for application to both metal-on-polymer and polymer-on-metal systems. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.120185

出版商:AIP    

年代:1997

数据来源: AIP