51. |
Metallic single electron devices fabricated using a multilayer technique |
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Applied Physics Letters,
Volume 71,
Issue 5,
1997,
Page 713-715
Th. Weimann,
H. Wolf,
H. Scherer,
J. Niemeyer,
V. A. Krupenin,
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摘要:
Single electron tunneling (SET) transistors were fabricated for the electrodes and for the island using two different resist masks. This technology overcomes disadvantages of the well-established shadow evaporation method usually used for the fabrication of SET devices and offers more flexibility in materials and layouts. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119838
出版商:AIP
年代:1997
数据来源: AIP
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52. |
Bias-enhanced nucleation of diamond on silicon dioxide |
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Applied Physics Letters,
Volume 71,
Issue 5,
1997,
Page 716-718
M. D. Irwin,
C. G. Pantano,
P. Gluche,
E. Kohn,
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摘要:
Characterization of amorphousSiO2surfaces after biasing pretreatments, which induce nucleation of diamond, has been carried out using x-ray photoelectron spectroscopy and Raman spectroscopy. A mixture of silicon carbide, silicon oxycarbide, and diamond are formed upon exposure of biasedSiO2surfaces to aCH4+H2plasma used for diamond deposition. It is concluded that nucleation of diamond on amorphousSiO2surfaces is promoted by formation of a SiC surface layer. Textured diamond films have been fabricated on bulkSiO2substrates using biasing pretreatments to induce diamond nucleation. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119839
出版商:AIP
年代:1997
数据来源: AIP
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53. |
Novel high temperature multilayer electrode-barrier structure for high-density ferroelectric memories |
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Applied Physics Letters,
Volume 71,
Issue 5,
1997,
Page 719-721
H. D. Bhatt,
S. B. Desu,
D. P. Vijay,
Y. S. Hwang,
X. Zhang,
M. Nagata,
A. Grill,
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摘要:
This has been accomplished in the past using four/five separate electrode- and diffusion-barrier layers. In this letter, we report a novelPt–Rh–Ox/Pt–Rh/Pt–Rh–Oxelectrode-barrier structure which acts as an electrode as well as a diffusion barrier for integration of the ferroelectric capacitors directly onto silicon deposited using anin situreactive rf sputtering process. The electrodes have a smooth and fine grained microstructure and are excellent diffusion barriers between thePbZr0.53Ti0.47O3(PZT) and Si substrate and exhibit good thermal stability up to very high processing temperatures of 700 °C. The ferroelectric (PZT) test capacitors using these electrode barriers grown directly on Si, show well saturated hysteresis loops withPrandEcof 16 &mgr;C/cm2and 30–40 kV/cm, respectively. The capacitors exhibit no significant fatigue loss (<5&percent;) up to1011cycles and have low leakage currents(2×10−8A/cm2at 100 kV/cm). These electrode barriers can be used to directly integrate the thin film capacitors on the source/drain of the transistors of the memory cell structure for accomplishing large scale integration.©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119840
出版商:AIP
年代:1997
数据来源: AIP
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54. |
Comment on “The second harmonic component in the Bessel beam” [Appl. Phys. Lett.68, 608 (1996)] |
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Applied Physics Letters,
Volume 71,
Issue 5,
1997,
Page 722-722
Xiaojun Liu,
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摘要:
ISSN:0003-6951
DOI:10.1063/1.119841
出版商:AIP
年代:1997
数据来源: AIP
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55. |
Response to “Comment on ‘The second harmonic component in the Bessel beam’ ” [Appl. Phys. Lett.71, 722 (1997)] |
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Applied Physics Letters,
Volume 71,
Issue 5,
1997,
Page 723-724
Desheng Ding,
Zuhong Lu,
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摘要:
ISSN:0003-6951
DOI:10.1063/1.119842
出版商:AIP
年代:1997
数据来源: AIP
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