摘要:

Proton‐induced characteristic X rays (1–10 keV) have been used to study,in situ, the alloy composition of 304L stainless steel surfaces as a function of the vacuum annealing temperature. Effects of 15‐min isochronal vacuum anneals between 700 and 1450°K were determined by probing to depths of about 1 &mgr;m with 150‐ to 400‐keV protons. In particular, chromium depletion was significant above 1200°K. For 200‐keV protons, the Cr(K&agr;)/Fe(K&agr;) ratio decreased from about 0. 8 for 700–1200°K to 0. 19 at 1450°K; this corresponds to a decrease in the chromium content from 19 to about 6 wt%.

ISSN:0003-6951    

DOI:10.1063/1.1653995

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

A novel technique for fabricating charge‐coupled devices (CCD) is described. Effectively zero lateral spacing between adjacent capacitor plates of the CCD is achieved by taking advantage of the SiO2undercutting which occurs during etching of the SiO2&sngbnd;Al2O3double insulator system.

ISSN:0003-6951    

DOI:10.1063/1.1653996

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

We have solved the boundary value problem associated with the Williams domain mode and the variable grating mode in nematic liquid crystals. Using linearized electrohydrodynamic equations of motion, standard constitutive relations, and experimentally observed material constants, we reproduce the significant experimental observations.

ISSN:0003-6951    

DOI:10.1063/1.1653997

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Exact numerical solutions for the surface impedance and electric field of metal films under anomalous skin effect conditions are presented and discussed. It is shown that under certain conditions the film impedance is significantly lower than the bulk impedance.

ISSN:0003-6951    

DOI:10.1063/1.1653998

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Centrifugally formed vortex channels in dye laser solutiosn can provide damage‐resistant confinement of intense capillary arc discharges and allow efficient coupling of arc radiation into the dye.

ISSN:0003-6951    

DOI:10.1063/1.1653999

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Schottky barrier heights of metal‐silicon contacts have been measured as a function of temperature at high uniaxial ⟨111⟩ stress (100 kbar). The change in band gap, as compared to the zero‐pressure band gap, can be attributed to a change in position of the conduction band edge alone, i.e., a change in electron affinity.

ISSN:0003-6951    

DOI:10.1063/1.1654000

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The gain of a transversely excited pulsed CO2laser with distributed electrodes has been examined with and without the addition of hydrogen. Spatially, the gain shows a sharp peak a few millimeters from the cathode, followed by a region of relatively uniform gain. The gain of the latter region increases from 13 to 18 dB/m upon the addition of hydrogen. The gain‐vs‐time curves show peaks which propagate from cathode to anode at velocities ranging from 600 to 1200 m/sec.

ISSN:0003-6951    

DOI:10.1063/1.1654001

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

A high‐density &thgr; pinch has been irradiated by the 0.2‐J 180‐nsec pulse of a CO2laser. Fast photography and spectroscopy monitor the plasma behavior, temperature, and density and permit a comparison with theory.

ISSN:0003-6951    

DOI:10.1063/1.1654002

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Gain and laser oscillations are obtained on rotational transitions of the first excited vibrational state of HF gas at room temperature, resonantly pumped by the 2.7‐&mgr; lines of a pulsed HF laser. Pumping theP‐branch transitions connecting the ground and first excited vibrational states produces gain at the coupled rotational transitions at 36, 42, 51, 63, 84, and 126 &mgr;. The gain exhibits directional properties characteristic of a unidirectional amplifier predicted by a recent theory. The incremental gains of these lines are very large, in excess of 1/cm, and the lines oscillate easily without mirrors (``superradiance'').

ISSN:0003-6951    

DOI:10.1063/1.1654003

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

In1−xGaxP laser diodes which emit coherently at 80 °K at wavelengths as short as 6105 Å with threshold current densities of 4000–6000 A/cm2have been fabricated from vapor‐grown In1−xGaxPp‐njunction structures. This is the shortest‐wavelength laser emission and the first example of coherentorangeemission yet reported from a semiconductorp‐njunction. From vapor‐grown In1−xGaxP spontaneous‐light‐emitting diodes, external quantum efficiencies in excess of 0.1% have been obtained for orange and red emission at room temperature.

ISSN:0003-6951    

DOI:10.1063/1.1654004

出版商:AIP    

年代:1972

数据来源: AIP