1. |
Scattering of light from Rayleigh waves |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 399-400
C. C. Sung,
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摘要:
The diffracted intensity of light scattered from surface (Rayleigh) waves is calculated by satisfying all boundary conditions to first order in the surface displacements. Comparison with existing experimental data and previous theoretical results is made, and several discrepancies are indicated. More importantly, the relative positions of the Brewster angles for the various diffracted orders appear to the reversed, experimentally, from those predicted in the present treatment.
ISSN:0003-6951
DOI:10.1063/1.90082
出版商:AIP
年代:1978
数据来源: AIP
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2. |
The significance of the distribution of hot spots on the interpretation of laser produced plasma experiments |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 401-402
B. Arad,
S. Eliezer,
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摘要:
It is shown here that experimental results from different laser devices cannot be compared unless proper care is taken of the distributions of the hot spots.
ISSN:0003-6951
DOI:10.1063/1.90083
出版商:AIP
年代:1978
数据来源: AIP
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3. |
Measurements of the electronic and nuclear contributions to the nonlinear refractive index of beryllium fluoride glasses |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 403-405
M. J. Weber,
C. F. Cline,
W. L. Smith,
D. Milam,
D. Heiman,
R. W. Hellwarth,
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摘要:
The nonlinear refractive‐index coefficientn2of three beryllium fluoride glasses was measured at 1064 nm using time‐resolved interferometry. The refractive‐index nonlinearity of amorphous BeF2is the smallest reported for any solid. From Raman scattering spectra, the nuclear contributionn2was found to be ≈20–30% of the total, a factor similar to that for oxide glasses.
ISSN:0003-6951
DOI:10.1063/1.90084
出版商:AIP
年代:1978
数据来源: AIP
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4. |
Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 406-407
R. D. Dupuis,
P. D. Dapkus,
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摘要:
Ga(1−x)AlxAs‐GaAs double‐heterostructure mesa‐stripe‐geometry lasers that operate continuously at room temperature (23 °C) have been grown by metalorganic chemical vapor deposition (MO‐CVD). Threshold currents as low as 119 mA dc have been measured for devices with a mesa width of 14 &mgr;m and a cavity length of 380 &mgr;m.
ISSN:0003-6951
DOI:10.1063/1.90085
出版商:AIP
年代:1978
数据来源: AIP
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5. |
Active fail‐safe terminal for fiber‐optic data bus |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 408-410
R. A. Soref,
A. R. Nelson,
D. H. McMahon,
W. B. Spillman,
L. E. Sheppard,
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摘要:
A novel send/receive terminal for multimode fiber bussing has been constructed in an 85‐&mgr;m‐thick LiTaO3plate forming a curved focusing reflector on the plate end. The low‐loss T terminal is an electro‐optic switch that requires no light source of its own. It provides maximum optical throughput in the absence of electrical excitation.
ISSN:0003-6951
DOI:10.1063/1.90086
出版商:AIP
年代:1978
数据来源: AIP
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6. |
GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 410-412
C. P. Lee,
S. Margalit,
I. Ury,
A. Yariv,
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摘要:
Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components.
ISSN:0003-6951
DOI:10.1063/1.90087
出版商:AIP
年代:1978
数据来源: AIP
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7. |
Collisionless production of C2(a3&pgr;u) in an intense infrared laser field |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 413-415
J. D. Campbell,
M. H. Yu,
C. Wittig,
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摘要:
It is shown that C2is formed in thea3&pgr;ustate via the ir photodissociation of selected polyatomic molecules in the absence of collisional processes.
ISSN:0003-6951
DOI:10.1063/1.90067
出版商:AIP
年代:1978
数据来源: AIP
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8. |
AlGaAs‐GaAs double‐heterostructure small‐area light‐emitting diodes by molecular‐beam epitaxy |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 415-417
T. P. Lee,
W. S. Holden,
A. Y. Cho,
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摘要:
Small‐area high‐radiance LED’s fabricated from AlGaAs‐GaAs double‐heterostructure wafers grown by molecular beam epitaxy are reported. Both oxide‐confinement and reverse‐biased junctions were employed to confine the injection current to the small light‐emitting areas. The series resistance of the diodes was reduced by zinc diffusions into and near the active region and both the linearity and the power saturation characteristics were improved. The interfacial recombination rate was determined to be about 6.6×103cm/sec. These results are compared with LED’s made by liquid‐phase epitaxy.
ISSN:0003-6951
DOI:10.1063/1.90068
出版商:AIP
年代:1978
数据来源: AIP
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9. |
The photoinitiated impulse‐enhanced electrically excited (PIE) discharge for high‐power cw laser applications |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 418-420
H. J. J. Seguin,
A. K. Nam,
J. Tulip,
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摘要:
The application of high‐repetition‐rate photoionized TEA laser techniques to continuous wave CO2lasers is described. A PIE discharge approach is shown to provide a simple and convenient method for production of uniform large‐volume high‐density plasmas, suitable for continuous high‐powered CO2laser operation. The approach may be suitable for discharge‐pumped noble‐gas–halide lasers.
ISSN:0003-6951
DOI:10.1063/1.90069
出版商:AIP
年代:1978
数据来源: AIP
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10. |
BOXCARS: Crossed‐beam phase‐matched CARS generation in gases |
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Applied Physics Letters,
Volume 32,
Issue 7,
1978,
Page 421-423
Alan C. Eckbreth,
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摘要:
CARS generation from N2has been demonstrated using a crossed‐triple‐beam phase‐matching technique. This approach can provide greater and unambiguous spatial resolution for diagnostic purposes in contrast to the conventionally employed collinear phase‐matching schemes. The technique has been dubbed BOXCARS based upon the shape of the phase‐matching diagram.
ISSN:0003-6951
DOI:10.1063/1.90070
出版商:AIP
年代:1978
数据来源: AIP
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