摘要:

Long‐range coupling and phase locking of several 10‐element resonant antiguided arrays via (lateral) radiation leakage is demonstrated. Coupling occurs for interarray separations as large as 90 &mgr;m, as evidenced from far‐field patterns and spectrally resolved near‐field patterns. Diffraction‐limited‐beam operation is achieved from a 244‐&mgr;m aperture (four coupled 10‐element arrays) device. Intermodal discrimination between the in‐phase mode and adjacent higher‐order modes is shown to be maximized for a resonant ensemble.

ISSN:0003-6951    

DOI:10.1063/1.106258

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Passive mode locking andQswitching has been achieved for the first time in an Er3+:YSGG laser at &lgr;=2.8 &mgr;m using ultrathin single‐crystal InAs epilayers grown on GaAs substrate which were subsequently bombarded with 15 keV protons at a dose of 1013cm−2. The bleaching effect was due to a dynamic Moss–Burstein mechanism with a fast (<100 ps) recovery time. In the case of passive mode locking, pulses of 10 MW power were generated at &lgr;=2.8 &mgr;m.

ISSN:0003-6951    

DOI:10.1063/1.106259

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Off‐resonant third‐order nonlinear optical susceptibilities using degenerate four‐wave mixing measurements in solution at 1.064 &mgr;m are reported for partially doped states of the soluble, stable, reprocessible conducting polymers poly(4‐amino biphenyl) [P(4ABP)] and poly(diphenyl amine) [P(DPA)] whose synthesis and properties were reported earlier. The polymers show appreciable nonlinearities, &khgr;(3)xxxxbeing (1.4±0.3)×10−10esu for P(4ABP) and (1.3±0.3)×10−10esu for P(DPA), with a time response faster than 40 ps.  

ISSN:0003-6951    

DOI:10.1063/1.106260

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We report the realization of an inverted cavity (through‐substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained‐layer GaAs/InGaAs multiple quantum wells. At room temperature, a contrast ratio of 12:1 is realized along with a dynamic range of 20% at an operating wavelength of 9565 A˚.

ISSN:0003-6951    

DOI:10.1063/1.106261

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We report the results of loss measurements for guided waves in silicon‐on‐insulator (SOI) optical waveguides formed by the bond‐and‐etchback process. Losses as low as 2.6 (2.0) dB/cm were found for the TE0(TM0) mode for wavelength &lgr;=1.319 &mgr;m. Grating coupling into these waveguides is demonstrated and discussed.

ISSN:0003-6951    

DOI:10.1063/1.106262

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We report bistable operation of a strained‐layer InGaAs/GaAs asymmetric Fabry–Perot optical modulator configured as a self‐electro‐optic effect device (SEED) operating in reflection mode. Bistable loops are observed from 949 to 962 nm with switching powers down to submicrowatt levels. The contrast ratio between on and off states is as large as 5:1 (7 dB) and the device will hold in either state indefinitely. A 600‐&mgr;m‐diam device has a switching time of 20 &mgr;s for 2.1 fJ &mgr;m−2switching energy. Large optical latch arrays are envisaged using this device.

ISSN:0003-6951    

DOI:10.1063/1.106263

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We have applied a new heterodyne measurement of spontaneous emission modes of a cw, unmodulated quantum well laser operating above threshold, to observe spectrally asymmetric nonlinear gain suppression and intrinsic four‐wave mixing up to 675 GHz from the lasing frequency.

ISSN:0003-6951    

DOI:10.1063/1.106264

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The fabrication and performance characteristics of an integrated distributed feedback (DFB) laser and optical amplifier structure are described. The structure utilizes semi‐insulating Fe‐doped InP layers for current confinement to the active region, electrical isolation between the two sections, and for lateral index guiding. The amplified output has a slope of 1 mW/mA of laser current with the amplifier biased at 150 mA, which is a factor of 5 larger than that for a typical laser. The laser emits near 1.55 &mgr;m, and the spectral width under modulation of the amplified output is considerably smaller than that for a DFB laser for the same on/off ratio.

ISSN:0003-6951    

DOI:10.1063/1.106419

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

An efficient vacuum ultraviolet light source of large diameter has been developed for use in photoexcited processes. It has a novel structure in which microwaves propagating through a sapphire window break down Xe gas enclosed in a disk‐shaped volume and thereby produce intense emission from Xe at a wavelength of 147 nm. By optimizing the pulse width and the repetition rate, we obtained an illuminance of more than 3 mW/cm2at the window surface. When this lamp was used as a source for photoinduced chemical vapor deposition of hydrogenated amorphous silicon films, a deposition rate of 5 nm/min was attained.

ISSN:0003-6951    

DOI:10.1063/1.106241

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Optically pumped lasing of (111) oriented bulk ZnSe grown by seeded physical vapor phase transport (SPVT) technique has been achieved at room temperature under near resonant pumping with the excitation photon energy very close to the fundamental band gap. Laser emission can be seen at a pumping intensity as low as 7 kW/cm2. The lasing mode spacings resulting from the dispersion of the index of refraction for ZnSe in a Fabry–Perot resonator‐like cavity have been observed as well. Our experimental results demonstrate that SPVT ZnSe single crystals have the quality sufficient to develop low‐threshold, high‐power output blue lasers.

ISSN:0003-6951    

DOI:10.1063/1.106242

出版商:AIP    

年代:1991

数据来源: AIP