摘要:

The field control of luminescent characteristic is observed with the three‐terminal quantum‐confined field‐effect light‐emitting device at a high temperature of 100–300 K. The modulation scheme caused by the field‐induced change in radiative lifetime without change in carrrier density is demonstrated in the practical device. A fast switching of the spontaneous emission intensity free from lifetime limitation is obtained.

ISSN:0003-6951    

DOI:10.1063/1.101680

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

The time dependence of catastrophic optical damage (COD) was studied for the cw operation of AlGaAs single quantum well lasers with cleaved mirrors. An empirical rule is proposed, which yields the time for a COD failure in the form of a rate equation, containing a frequency factor and an activation energy. In this way COD is explained as a thermally activated process, depending on the mirror temperature.

ISSN:0003-6951    

DOI:10.1063/1.101681

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

We have performed the first experiment on a novel laser diode, the lasing wavelength of which can be switched with increasing current. Wavelength switching over 13 nm under continuous operation, as well as lasing at dual wavelengths, has been achieved for the first time.

ISSN:0003-6951    

DOI:10.1063/1.101682

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

We report on high‐efficiency frequency doubling of a mode‐locked diode‐laser‐pumped Nd:YAG laser to 532 nm in a crystal of MgO:LiNbO3in an external enhancement ring cavity. At a pump power of 500 mW the mode‐locked Nd:YAG laser produced an average power of 66 mW incident on the enhancement cavity in pulses of 12 ps duration at a repetition rate of 366 MHz. This has been frequency doubled with a conversion efficiency of 53% to produce pulses at 532 nm of 35 mW average power in bandwidth‐limited pulses of 9.5 ps duration.

ISSN:0003-6951    

DOI:10.1063/1.101683

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Spin‐coated and solution‐cast films of poly[5,7‐dodecadiyn‐1,12‐diol‐bis(n‐butoxycarbonyl‐methyl‐urethane)], or briefly, poly‐4BCMU, irreversibly bleach when irradiated by light tuned within the absorption band of the polymer sample. Characteristic bleaching times have been measured at several wavelengths. The refractive index of poly‐4BCMU has been measured at 1.064 &mgr;m for various photobleaching energies. Refractive index changes as large as −0.08 have been measured, and the decrease in refractive index has been used to define waveguide channels and gratings.

ISSN:0003-6951    

DOI:10.1063/1.101684

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

In this letter we demonstrate a new kind of spectrometer capable of resolving the modes of a 1.3 &mgr;m quaternary laser diode. The device uses the nonlinear sum frequency generation of light in the semiconductor waveguide to map out the frequency spectrum of the input beam. This device was used to obtain the spectrum of a multimode Fabry–Perot 1.3 &mgr;m laser diode. Furthermore, the same device was used to observe the shift in the individual Fabry–Perot mode as well as the shift in the overall spectrum of the laser diode as a function of current. These observations indicate that the waveguide spectrometer can be useful for applications like implementing frequency division multiplexing communication systems by allowing the determination of absolute and relative frequencies of different channels in a compact fashion.

ISSN:0003-6951    

DOI:10.1063/1.101685

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Using quantum well laser devices with a window in thep‐type contact, we have measured the relative change of spontaneous emission intensity at threshold with temperature for 58‐A˚‐wide GaAs wells. Over the range 250–340 K the data are in good agreement with the linear relation obtained from a gain‐current calculation which includes transition broadening. This linear behavior contrasts with the stronger temperature dependence of the total measured threshold current of the same devices which includes nonradiative barrier recombination processes.

ISSN:0003-6951    

DOI:10.1063/1.101686

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

A statistical kinetic model for gradual degradation of semiconductor lasers and light‐emitting diodes under the influence of pressure is presented. Within the framework of this model, the rate coefficient for disordering atom jumps,K, and the operating lifetime of the device, &tgr;, are explicitly given in terms of temperature, pressure, material parameters, and free‐carrier concentration. We find that a compressive pressure reduces the effective activation energy of the rate process and therefore accelerates degradation in GaAs‐ and InP‐based devices.

ISSN:0003-6951    

DOI:10.1063/1.101687

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

It is shown that the unique properties of strained‐layer quantum well lasers can be identified by measuring the relaxation oscillation frequency as a function of optical gain. These measurements are insensitive to effects due to nonradiative recombinations and leakage currents, which can mask the beneficial effects in terms of a lower threshold current due to a reduced hole mass in strained quantum wells. The conclusion, both theoretically and experimentally, is that strained‐layer quantum well lasers have a higher differential gain but saturate at a lower gain level as compared to regular quantum well lasers. As a consequence, for a strained single quantum well, slightly higher relaxation oscillation frequency results, but only for certain limited ranges of device parameters. A multiple strained‐layer quantum well can in theory take better advantage of the higher differential gain.

ISSN:0003-6951    

DOI:10.1063/1.101688

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

All‐optical switching in nonlinearXjunctions with Kerr and saturable nonlinearities is analyzed using the beam propagation method. We establish that switching is possible in the nonlinearXjunction, and compare its nonlinear phase shift requirements with that of other all‐optical devices.

ISSN:0003-6951    

DOI:10.1063/1.101689

出版商:AIP    

年代:1989

数据来源: AIP