摘要:

We report the first demonstation of electrical tuning of the center wavelength of waveguide electro‐optic TE⟨–⟩TM converter/filters. Using a novel dual electrode configuration the filter center wavelength is shifted by one filter bandwidth by application of a 10‐V tuning voltage.

ISSN:0003-6951    

DOI:10.1063/1.92943

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

We report the use of Sr1−xBaxNb2O6as an efficient holographic four‐wave mixing medium. We have used this material in a continuous wave phase conjugate mirror with reflectivity exceeding unity, and in a phase conjugate resonator.

ISSN:0003-6951    

DOI:10.1063/1.92944

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

We report here the observation of a linear dependence of cw single‐frequency (GaAl)As diode laser linewidth as a function of reciprocal output power at 77, 195, and 273 K. The observed data are explained in terms of spontaneous emission events and their related refractive index perturbations.

ISSN:0003-6951    

DOI:10.1063/1.92945

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

TheB→Xspectrum of HgBr is photographed and analyzed for the single isotopic species200Hg 79Br. The analysis confirms Wieland’s earlier analysis [Z. Elektrochem. 64, 761 (1960)] up tov″≃23 but is different for higherv″levels, leading to a lower estimate of the ground‐state dissociation energy,De= 5500 cm−1. Franck–Condon calculations indicate thatR′e−R″e= 0.57 A, which is somewhat greater than concluded in earlier work. The previously reported HgBr laser lines appear not to coincide with specific band heads in the spectrum; instead they probably involve a semicontinuous overlap of rotational lines in severalv′‐v″bands of the 12 isotopic HgBr molecules of significance in ’’natural’’ HgBr.

ISSN:0003-6951    

DOI:10.1063/1.92946

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Stable unidirectional ring laser oscillation of optically pumped6Li2molecules was obtained for the first time. We observed transitions in the range 5237–5889 A˚ excited by different argon ion laser lines in the range 4579–4965 A˚. Using our laser‐induced fluorescence results for this molecule, we have assigned unambiguously 23 of 27 lines to specific rovibronic transitions in theB1&Pgr;u→X1&Sgr;+gband system of6Li2. The optimum pressure for operation of the optically pumped6Li2laser was found to be ∼4 Torr.

ISSN:0003-6951    

DOI:10.1063/1.92947

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Power spectral densities of frequency fluctuation of 5‐MHz, 5th‐overtone, plano‐convex IT‐cut quartz oscillators were evaluated for various fluctuation levels of environmental temperature. The spectrum is a superposition of two components of different origins: one depends on the temperature fluctuation level and the other does not. The temperature‐independent spectrum is inversely proportional to the Fourier frequency.

ISSN:0003-6951    

DOI:10.1063/1.92948

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Detailed structure and statistical divergence have been measured on the intense pulsed proton beam (300 keV, 80 ns, 5–10 kA) produced by an applied‐B&Vthgr;magnetically insulated ion diode. A statistical divergence of the beam of about ±2° azimuthally and ±2° to ±4° radially was obtained. Beam image patterns show an intensity modulation of the proton beam in the azimuthal direction corresponding to a period 0.5–1 mm on the anode surface in addition to a regular 6‐mm modulation caused by structure built into the anode.

ISSN:0003-6951    

DOI:10.1063/1.92949

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

We report, from Shubnikov‐de Haas and cyclotron resonance experiments, the first observation of a two‐dimensional, high‐mobility electron gas in a selectively doped In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.

ISSN:0003-6951    

DOI:10.1063/1.92932

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Normally‐off and pseudo‐normally‐on modulation‐doped Al0.3Ga0.7As/GaAs Schottky barrier field‐effect transistors were fabricated and characterized. The structures were grown by molecular beam epitaxy and exhibited electron mobilities as high as 8000, 100 000, and 200 000 cm2/Vs at 300, 78, and 10 K, respectively. Inclusion of an Al0.3Ga0.7As buffer layer between the substrate and the modulation‐doped layers improved the transconductance and saturation characteristics substantially. This improvement was observed to be strongly dependent on the substrate temperature during the buffer layer growth, with the best results being obtained at 700 °C.

ISSN:0003-6951    

DOI:10.1063/1.92933

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Hydrogen passivation of silicon grain boundaries has been investigated by using deuterium as a readily identifiable isotope which duplicates hydrogen chemistry. Deuterium detection with high sensitivity was achieved with secondary‐ion mass spectrometry. Diffusion of deuterium in single‐ crystal silicon and polycrystalline silicon thin films at low temperatures (e.g., 350 °C) clearly demonstrates enhanced diffusion along grain boundaries. Defects at grain boundaries were detected by electron‐spin resonance and identified as silicon‐dangling bonds. Deuterium passivation of grain boundaries is revealed by correlated deuterium diffusion and dangling‐bond annihilation in polycrystalline silicon films.

ISSN:0003-6951    

DOI:10.1063/1.92934

出版商:AIP    

年代:1982

数据来源: AIP