1. |
Multistability and soliton modes in nonlinear microwave resonators |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1105-1107
A. Gasch,
B. Wedding,
D. Ja¨ger,
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摘要:
Nonlinear optical cavities are known to exhibit bistability and multistability. In this letter the properties of microwave Fabry–Perot and ring resonators with second‐order dispersive nonlinearity are analyzed. Experimental results such as multiple‐valued output versus input characteristics, resonance curves, and waveforms are described. On the basis of harmonic and subharmonic generation a new mechanism is found leading to multistability, which is quantitatively attributed to well‐defined soliton modes propagating in the resonator.
ISSN:0003-6951
DOI:10.1063/1.94658
出版商:AIP
年代:1984
数据来源: AIP
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2. |
Spin polarized photoemission from GaAs and Ge: Temperature dependence of the threshold polarization |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1107-1109
R. Allenspach,
F. Meier,
D. Pescia,
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摘要:
The temperature dependence of the photoelectron polarization is identical for GaAs with positive and negative electron affinity, as well as for Ge. It is concluded that the depolarization is due to a surface effect.
ISSN:0003-6951
DOI:10.1063/1.94659
出版商:AIP
年代:1984
数据来源: AIP
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3. |
Dependence of astigmatism, far‐field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1109-1111
Takayoshi Mamine,
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摘要:
The effects of active layer thickness on the astigmatism, the angle of far‐field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of astigmatism, a narrow far‐field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers.
ISSN:0003-6951
DOI:10.1063/1.94660
出版商:AIP
年代:1984
数据来源: AIP
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4. |
Emission spectra, surface quality, and mechanism of excimer laser etching of polyimide films |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1112-1114
G. Koren,
J. T. C. Yeh,
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摘要:
Emission spectra in the visible and ultraviolet range, and scanning electron microscopy of polyimide films exposed to 193, 248, and 351‐nm laser radiation were used to elucidate the mechanism of the laser etching process. It was found that rough laser etched surfaces, with nonuniformities larger than 0.5 &mgr;m, are accompanied by a continuum emission from the blow‐off materials, while smooth surfaces are characterized by strong C2emission in theA 3&Pgr;g→X′ 3&Pgr;&mgr;bands. Smoothly etched surfaces were obtained for all laser wavelengths provided the energy absorbed per unit volume in the surface exceeds a threshold value of (5.0±0.5)×104J/cm3. It is suggested that surface smoothness results from transient melting and that the laser etching mechanism is mostly a statistical thermodynamic process without complete energy randomization.
ISSN:0003-6951
DOI:10.1063/1.94661
出版商:AIP
年代:1984
数据来源: AIP
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5. |
High resolution photothermal laser probe |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1115-1117
C. C. Williams,
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摘要:
At frequencies near 1 GHz, the acoustic wavelength in argon gas becomes half that of visible light, making possible collinear Bragg scattering of laser light by the sound. This acousto‐optic interaction has been used to detect photothermally generated acoustic power at the surface of solids. This new technique provides a noncontacting probe for the detection of 100–1000‐A˚ thermal waves with optical resolution. The essential features of the theory behind this new photothermal probe are presented along with a description of the experimental implementation. High resolution images of implanted silicon are included which clearly demonstrate the sensitivity of the probe to variations in the thermal characteristics of solids.
ISSN:0003-6951
DOI:10.1063/1.94662
出版商:AIP
年代:1984
数据来源: AIP
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6. |
Cleaved‐coupled‐cavity lead‐salt diode lasers |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1118-1119
Wayne Lo,
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摘要:
A simple technique has been developed for the fabrication of lead‐salt cleaved‐coupled‐cavity diode lasers. The improvement in spectral purity and the reduction in threshold current of these coupled‐cavity lasers will be discussed.
ISSN:0003-6951
DOI:10.1063/1.94663
出版商:AIP
年代:1984
数据来源: AIP
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7. |
Further characterization of the 4.4‐&mgr;m13C 16O2cascade laser |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1119-1121
R. P. Johnson,
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摘要:
Nine distinct rotational laser lines of the ([10° 1]I–[10° 0]I) vibrational band of13C 16O2near 4 &mgr;m have been observed and identified. Wavelength measurements of these lines are given as well as a simplified design for a CO2cascade laser resonator.
ISSN:0003-6951
DOI:10.1063/1.94664
出版商:AIP
年代:1984
数据来源: AIP
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8. |
Dispersion and polarization dependence of mobile carrier optical nonlinearities |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1121-1122
K. C. Rustagi,
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摘要:
Based on the author’s earlier work, it is shown that the proper inclusion of carrier scattering should strongly modify the frequency and polarization dependence of optical nonlinearities due to mobile carriers in semiconductors. When the momentum relaxation is much faster than the energy relaxation, the intensity dependent refractive index is enhanced, the induced birefringence becomes a sharp function of the difference frequency &ohgr;a−&ohgr;b, and a collision induced stimulated Raman effect becomes important.
ISSN:0003-6951
DOI:10.1063/1.94655
出版商:AIP
年代:1984
数据来源: AIP
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9. |
Single‐ion recombination lasers in CO2laser‐vaporized target material |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1123-1125
O. R. Wood,
J. J. Macklin,
W. T. Silfvast,
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摘要:
Fifteen recombination lasers have been produced in the ionic species of nine elements by focusing eight transversely excited atmospheric pressure CO2laser beams onto targets of these materials to produce an elongated gain region in the vaporized plasmas. The results include the first lasers in ionized species and also the first visible lasers excited by this process.
ISSN:0003-6951
DOI:10.1063/1.94656
出版商:AIP
年代:1984
数据来源: AIP
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10. |
Power dependence of the linewidth enhancement term in semiconductor lasers |
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Applied Physics Letters,
Volume 44,
Issue 12,
1984,
Page 1126-1128
W. Elsa¨sser,
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摘要:
The theory of the spectral linewidth of a single longitudinal laser mode is re‐examined on the basis of a phase diffusion model. The contribution to the linewidth resulting from the coupling of phase and amplitude (self‐coupling term described by the enhancement factor &agr;) is investigated exactly. In particular, the commonly used approximation of a small spontaneous emission rate and/or strongly damped relaxation resonance is not applied. The self‐coupling then results no longer in a constant enhanced slope in the Schawlow‐Townes formula. The enhancement linewidth itself is now no linear function of the inverse optical power and decreases to zero in the limit of high spontaneous emission rates and small optical power. Therefore, deviations from the linear dependence of the mode linewidth on mode power are predicted.
ISSN:0003-6951
DOI:10.1063/1.94657
出版商:AIP
年代:1984
数据来源: AIP
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