摘要:

A novel etching technique for the 1.5‐&mgr;m GaInAs/AlGaInAs buried heterostructure quantum‐well laser diode is developed. Tartaric acid is used for the etching of GaInAs and AlGaInAs layers for the first time. Using a three‐step material‐selective etching, a 3‐&mgr;m‐high mesa with about 1.5‐&mgr;m‐wide active layer and 3‐&mgr;m‐wide contact layer can be achieved with good reproducibility. Nearly flat surfaces were obtained after a two‐step organometallic chemical vapor deposition growth. A low threshold current of 11 mA was obtained for a 570‐&mgr;m‐long cavity device.

ISSN:0003-6951    

DOI:10.1063/1.105471

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The first laser diodes fabricated from wide‐band‐gap II‐VI semiconductors are demonstrated. These devices emit coherent light at a wavelength of 490 nm from a ZnSe‐based single‐quantum‐well structure under pulsed current injection at 77 K. This is the shortest wavelength ever generated by a semiconductor laser diode.

ISSN:0003-6951    

DOI:10.1063/1.105472

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Stability of pulse energy and timing in a passively mode‐locked two‐section quantum‐well laser is measured. Spectral analysis of the 546‐MHz pulse train reveals rms timing jitter of 5.5 ps above 50 Hz and rms pulse energy fluctuations of <0.52% above 200 Hz.

ISSN:0003-6951    

DOI:10.1063/1.105473

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A new mechanism for polarization rotation in rib waveguides is suggested and demonstrated in InP waveguides. The polarization rotation is achieved by loading a rib waveguide in a periodic asymmetric way. Complete TE↔TM conversion, with only 2–3 dB excess loss, is obtained in a 3.7‐mm‐long InP loaded waveguide. Strong polarization rotation (80%), in shorter devices (0.3 mm long), is also demonstrated.

ISSN:0003-6951    

DOI:10.1063/1.105474

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A large area (slab) waveguide carbon monoxide laser, excited by a transverse radio frequency discharge and cooled by diffusion, has been demonstrated at electrode temperatures down to −30 °C. A maximum laser power of 120 W has been achieved from a sealed 386×2 mm discharge at an extraction efficiency of 17%. Discharge area scaling factors of 15.5 kW m−2have been observed and cw power extraction exceeding 50 W using tap water cooling has been achieved.

ISSN:0003-6951    

DOI:10.1063/1.105475

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A train of 2 ps pulses, which is believed to be the shortest single mode pulses ever reported from semiconductor lasers, is produced by compressing the chirped pulses generated from a gain switched 1.3 &mgr;m distributed feedback laser diode with a dispersive fiber. An analytic model for the pulse compression in fiber is presented, which shows fairly good agreement with the experiment. The analytical results derived from the model can be advantageously used in the design of the fiber compressor for semiconductor lasers.

ISSN:0003-6951    

DOI:10.1063/1.105476

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The 1.06 &mgr;m Nd transition in co‐doped Cr,Nd:Gd3Sc2Ga3O12(Cr,Nd:GSGG) is obtained by diode pumping Cr3+at 670 nm and is shown to produce efficient, low‐threshold laser operation. Both cw and long‐pulse diode pumping were demonstrated, with pump power levels as high as 300 mW cw and 1 W pulsed. The lowest threshold power measured was 938 &mgr;W, and the highest output power obtained was 43 mW cw and 173 mW pulsed. The best slope efficiency obtained was 42.1%, 78% of the theoretical maximum. Loss measurements indicate a value of 0.4% cm−1.

ISSN:0003-6951    

DOI:10.1063/1.105477

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Ta vapor is generated from a Ta metal plate by irradiation of a pulsed YAG laser of a 2 J energy, and the Ta atoms are optically pumped by a KrF laser of 10 mJ energy. Ta laser oscillation has been obtained on five lines in the ultraviolet region; 292.5 nm (6F01/2−4P3/2), 322.7 nm (6F03/2−4P5/2), 328.1 nm (6F03/2−6D1/2), 330.4 nm (6F03/2−6D3/2), and 351.4 nm (6F01/2−2P1/2). The gains/cm on these laser lines are 0.35, 0.24, 0.09, 0.09, and 0.20, respectively. A maximum output power of 48 W has been obtained at 2.5 Torr of He buffer gas pressure.

ISSN:0003-6951    

DOI:10.1063/1.105478

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Laser action in the blue‐green at room temperature has been achieved in pulsed optically pumped (Zn,Cd)Se/ZnSe multiple quantum well structures at threshold intensitiesIth≊30 kW/cm2. Continuous‐wave operation in a II‐VI semiconductor laser has also been demonstrated for the first time, here above 100 K. The role of excitons is found to be of importance in defining the lasing mechanism up to room temperature in these quasi‐two‐dimensional wide‐gap heterostructures.

ISSN:0003-6951    

DOI:10.1063/1.105479

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A novel GaAs/GaAlAs quantum well optoelectronic switching device which exhibits ans‐type negative differential resistance at room temperature and emits a high performance stimulated emission was demonstrated. The device structure is similar to the conventional separate confinement heterojunction quantum‐well laser and thus can be easily integrated with the optoelectronic integrated circuits. The devices can be switched optically and/or electrically. Threshold current densities of 1.2 kA/cm2, differential quantum efficiencies as high as 67% (0.5 W/A slope efficiency per facet) and output power in excess of 50 mW per facet were obtained. To date, this is one of the best overall performances in terms of output power, differential quantum efficiency and threshold current density for the optoelectronic switching devices exhibiting stimulated emission capability.

ISSN:0003-6951    

DOI:10.1063/1.106377

出版商:AIP    

年代:1991

数据来源: AIP