1. |
Effect of Proton Bombardment on Pb0.76Sn0.24Te |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 235-237
T. F. Tao,
C. C. Wang,
J. W. Sunier,
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摘要:
Effects of 200–450‐keV proton bombardment on the electrical properties of Pb0.76Sn0.24Te were studied.p‐type samples of initial hole concentration in the low 1017/cm3range were converted tontype after a proton dose of 5 × 1013p/cm2. For samples of higher initial hole concentration, the conversion was less consistent. The change in mobility due to bombardment was found to be moderate. The mobilities of somep‐type samples were doubled after type conversion.
ISSN:0003-6951
DOI:10.1063/1.1654125
出版商:AIP
年代:1972
数据来源: AIP
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2. |
Beam Effects in the Analysis of As‐Doped Silicon by Channeling Measurements |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 237-239
E. Rimini,
J. Haskell,
J. W. Mayer,
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摘要:
Channeling‐effect measurements with MeV He ions have been used to study the lattice location of As in silicon. Over the concentration range studied (5 × 1019− 1.2 × 1021/cm3) As was found to be 90–95% on substitutional sites. However, it was found that bombardment with the analysis beam caused 20–40% of the As to move off lattice sites. This effect may be responsible for the relatively low As substitutional fraction found in previous investigations. No bombardment‐induced off‐lattice movement was found in Sb‐doped Si indicating that this movement is species dependent.
ISSN:0003-6951
DOI:10.1063/1.1654126
出版商:AIP
年代:1972
数据来源: AIP
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3. |
Optical Transmission in Liquid‐Core Quartz Fibers |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 239-241
J. Stone,
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摘要:
Multimode liquid‐core quartz fibers, potentially useful for long‐distance optical communication, have been constructed. The optical transmission loss of these fibers has been measured between 6000 and 11 000 Å. Fibers filled with tetrachloroethylene or a mixture of equal parts by volume of tetrachloroethylene and carbon tetrachloride have transmission loss of 20 dB/km or less between 8400 and 8600 Å and between 10 400 and 11 000 Å. These bands are of particular interest because within them operate highly promising oscillators such as the GaAs diode and the Nd: YAG laser. An absorption peak of 80 dB/km at 9600 Å is attributed to a small percentage of OH in the tetrachloroethylene. In the wavelength intervals between 7000 and 7600 Å and between 8200 and 11 000 Å these fibers have losses lower than or about equal to those reported for any other fibers.
ISSN:0003-6951
DOI:10.1063/1.1654127
出版商:AIP
年代:1972
数据来源: AIP
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4. |
New Thin‐Film Tunnel Triode Using Amorphous Semiconductors |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 241-243
R. F. Shaw,
H. Fritzsche,
M. Silver,
P. Smejtek,
S. Holmberg,
S. R. Ovshinsky,
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摘要:
A new thin‐film tunnel triode is discussed which uses ap‐type amorphous film to achieve amplification of injected current from a tunnel cathode. It is not only the basis for a new semiconductor device but also suggests a novel method for measuring electrical properties of semiconductors.
ISSN:0003-6951
DOI:10.1063/1.1654128
出版商:AIP
年代:1972
数据来源: AIP
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5. |
CO Laser Action by C2H2Oxidation |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 243-244
J. D. Barry,
W. E. Boney,
J. E. Brandelik,
D. M. Mulder,
J. K. Woessner,
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摘要:
Laser emission has been detected from CO molecules produced by the dc discharge‐initiated chemical oxidation of C2H2. The vibrational‐rotational transitions werePbranch fromv= 3:2 tov= 11:10 withJ= 11−14, nominally. The explosive property of the oxidation reaction was verified.
ISSN:0003-6951
DOI:10.1063/1.1654129
出版商:AIP
年代:1972
数据来源: AIP
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6. |
Bistable Switching in Metal‐Semiconductor Junctions |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 244-245
A. Moser,
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摘要:
Bistable switching with memory has been achieved in variousn‐type GaAs Schottky contacts andn‐type Si Schottky contacts doped with trap impurities. Transition from the low‐conductivity state into a high‐conductivity state is established after a delay of 10 nsec, when a threshold voltage is exceeded. With opposite bias direction, resetting occurs in 10 nsec by exceeding a current threshold. Either state is maintained over weeks without bias.
ISSN:0003-6951
DOI:10.1063/1.1654130
出版商:AIP
年代:1972
数据来源: AIP
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7. |
High‐Field Transport Properties of GaSb |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 246-248
J. G. Ruch,
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摘要:
The recent availability of experimental data on the hot‐electron transfer in GaSb has stimulated the present theoretical work. In the past, the only comparison between hot‐electron transport theory and experiment has been through the velocity‐field characteristic or galvanic‐magnetic phenomena. Because of the insensitivities of these macroscopic characteristics to the value of the deformation potential for nonequivalent intervalley scattering, an exact value for the latter, which governs the electron transfer between central and satellite valleys, could not be obtained. A Monte Carlo calculation has been used to obtain the deformation potential for nonequivalent intervalley scattering by interpreting the experimental data on hot‐electron transfer in GaSb obtained using the Faraday rotation.
ISSN:0003-6951
DOI:10.1063/1.1654131
出版商:AIP
年代:1972
数据来源: AIP
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8. |
Behavior of Phosphorous and Arsenic Diffused Simultaneously into Silicon Crystals |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 248-249
F. Fujimoto,
K. Komaki,
M. Watanabe,
T. Yonezawa,
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摘要:
Behavior of phosphorus and arsenic atoms diffused simultaneously into silicon crystals, in which the density of phosphorus at the surface is 1021cm−3, was studied by random and aligned spectra of backscattered helium ions and radioactive analysis techniques. It was concluded that the phosphorus atoms enter substitutionally and arsenic atoms interstitially, indicating that interstitial atoms inhibit the generation of dislocations.
ISSN:0003-6951
DOI:10.1063/1.1654132
出版商:AIP
年代:1972
数据来源: AIP
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9. |
The Use of Sm3Co in Sintering SmCo5Magnets |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 250-251
R. C. Carriker,
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摘要:
The use of single phase Sm3Co as a sintering aid in the liquid‐phase sintering of SmCo5has been investigated. The magnetic properties of this system were studied as a function of the sintering‐aid content and sintering time vs temperature. Using a modest alignment field of only 10 kOe, a magnet with an energy product of 17.0 MG Oe has been achieved.
ISSN:0003-6951
DOI:10.1063/1.1654133
出版商:AIP
年代:1972
数据来源: AIP
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10. |
Behavior of a Deionized Liquid Crystal Subjected to Unipolar Injection in Nematic and Isotropic Phase |
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Applied Physics Letters,
Volume 20,
Issue 7,
1972,
Page 251-253
Jean‐Claude Lacroix,
Robert Tobaze´on,
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摘要:
Electrohydrodynamic phenomena in insulating MBBA subjected to unipolar injection of ionic carriers are described. Near the transition temperature, the transient currents following a voltage step were similar in the nematic and isotropic phases, over a wide range of voltages and electrode separations. High‐speed cinematography, Schlieren techniques, and the Kerr effect were resorted to in this investigation. Liquid motion was observed having a time lag and exhibited patterns closely similar to those previously observed in isotropic polar liquids. The velocities of hydrodynamic disturbances and of space‐charge fronts varied over a broad range, depending on experimental conditions.
ISSN:0003-6951
DOI:10.1063/1.1654134
出版商:AIP
年代:1972
数据来源: AIP
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