1. |
Photoconductivity of CdS crystals irradiated with fast electrons |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 1-2
Toshio Yoshida,
Takashi Oka,
Michiharu Kitagawa,
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摘要:
The effects of 10‐MeV electron irradiation on the photoconductivity of CdS single crystals were studied. Irradiation causes the appearance or increase of photoconductivity in the wavelength ranges from 0.8 to 3 &mgr; (the 1‐&mgr; band), from 0.55 to 0.8 &mgr;, and from 0.46 to 0.5 &mgr; (the exciton band). The 1‐&mgr; band is attributed to radiation‐produced defects located at levels from 0.4 to 1.6 eV below the bottom of the conduction band. The excitonic band results from dissociation of excitons at some kinds of radiation‐produced defects.
ISSN:0003-6951
DOI:10.1063/1.1654193
出版商:AIP
年代:1972
数据来源: AIP
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2. |
On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 2-4
F.N. Schwettmann,
D.L. Kendall,
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摘要:
The mechanism of formation of the kink in the impurity profile of phosphorus‐diffused layers in silicon is shown to be related to the ``tail'' that is formed during low‐temperature heat treatments. The concentration at which the tail is formed is a function of temperature with an activation energy of 0.79 eV. The enhanced diffusion which gives rise to the tail depends on processes occurring in the high‐concentration region. A complex model is required to explain all of these results.
ISSN:0003-6951
DOI:10.1063/1.1654200
出版商:AIP
年代:1972
数据来源: AIP
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3. |
Injection luminescence and laser action in epitaxial PbTe diodes |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 5-6
H. Holloway,
W.H. Weber,
E.M. Logothetis,
A.J. Varga,
K.F. Yeung,
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摘要:
Thin‐film diode lasers have been made from Schottky barriers on epitaxial PbTe. At 77 °K the spontaneous emission spectrum agrees with that calculated for direct band‐to‐band transitions. At 12 °K laser action is observed in the pulsed mode with an average current density, at threshold, of (2–3) × 102A cm−2. This is the first observation of diode laser action from evaporated thin films of any semiconductor.
ISSN:0003-6951
DOI:10.1063/1.1654213
出版商:AIP
年代:1972
数据来源: AIP
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4. |
Measurement of magnetic bubble mobility in epitaxial garnet films |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 7-8
G.P. Vella‐Coleiro,
W.J. Tabor,
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摘要:
A technique for measuring the velocity of a circular magnetic domain in a magnetic field gradient is described. The method has been applied to epitaxial garnet films, and results are presented for a film of nominal composition Eu1Er2Ga0.7Fe4.3O12. The technique is compared with other methods of measuring domain wall mobility.
ISSN:0003-6951
DOI:10.1063/1.1654214
出版商:AIP
年代:1972
数据来源: AIP
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5. |
Large quiescent collisionless high‐frequency discharge plasma |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 9-10
Earl R. Ault,
K.R. MacKenzie,
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摘要:
200 V p‐p (peak to peak) at 80 MHz applied to a plane sheet electrode of 0.0075‐cm‐diam parallel wires produces a reasonably uniform large‐volume collisionless plasma in zero magnetic field with a density of ∼ 109ions/cm3in argon at 3 × 10−4Torr. The noise fluctuation level〈&dgr;n/n〉 ≃ 2 × 10−4.
ISSN:0003-6951
DOI:10.1063/1.1654215
出版商:AIP
年代:1972
数据来源: AIP
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6. |
Generation of a surface‐acoustic‐wave correlation echo from coupling to charge carriers |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 11-12
R.L. Gunshor,
C.W. Lee,
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摘要:
A forward‐propagating surface‐acoustic‐wave signal interacts with a pump field applied to a nearby semiconductor. The result is the generation of a backward‐propagating ``echo'' whose envelope is the correlation of the signal and the pump. The echo is 25 dB down from signal for the pump power used.
ISSN:0003-6951
DOI:10.1063/1.1654194
出版商:AIP
年代:1972
数据来源: AIP
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7. |
Alpha‐ and proton‐induced x‐ray deexcitation of titanium |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 13-14
Patrick Richard,
Mike Senglaub,
Brant Johnson,
C. Fred Moore,
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摘要:
Measurements ofK&agr; andK&bgr; x rays induced by proton and &agr;‐particle beams from an electrostatic accelerator show a divergence from the normal x‐ray spectra as the nuclear charge increases. These measurements are consistent with the explanation that the ion excitation produces multiple inner‐shell electron vacancies, which in turn cause electronic‐shell energy shifts. The intensity of these shifted lines is a measure of the amount of multiple inner‐shell ionization.
ISSN:0003-6951
DOI:10.1063/1.1654195
出版商:AIP
年代:1972
数据来源: AIP
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8. |
Isotope separation rate in Haeffner effect |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 14-15
Om P. Sinha,
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摘要:
A simple theory is presented for Haeffner effect based on the ideas of Fiks. An exact formula derived for the isotope separation rate appears to be in good agreement with the experimental data on several systems.
ISSN:0003-6951
DOI:10.1063/1.1654196
出版商:AIP
年代:1972
数据来源: AIP
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9. |
Boron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 16-17
J.F. Ziegler,
B.L. Crowder,
G.W. Cole,
J.E.E. Baglin,
B.J. Masters,
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摘要:
The concentration distribution of10B atoms ion‐implanted into silicon has been determined with a new nuclear reaction technique, The concentration profiles for implantations in the energy range 40–500 keV were determined before and after annealing at 900 °C for 30 min and show that enhanced diffusion, because of radiation damage, is of minor importance. The profile ranges and widths have been compared to LSS theory and to other experiments.
ISSN:0003-6951
DOI:10.1063/1.1654197
出版商:AIP
年代:1972
数据来源: AIP
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10. |
Excitation of a long‐pulse CO2laser with a short‐pulse longitudinal electron beam |
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Applied Physics Letters,
Volume 21,
Issue 1,
1972,
Page 18-19
S. Marcus,
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摘要:
A 3‐nsec pulse of 600‐keV electrons has been used to ionize a CO2&sngbnd;N2&sngbnd;He medium from which laser pulses lasting up to 120 &mgr;sec have been obtained. The electron beam is nearly collinear with the laser axis and normal to the sustainer field. Pulse energies of 11.5 J have been obtained from the 75‐cm‐long device.
ISSN:0003-6951
DOI:10.1063/1.1654198
出版商:AIP
年代:1972
数据来源: AIP
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